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STH260N6F6-2

STH260N6F6-2
Mfr. #:
STH260N6F6-2
制造商:
STMicroelectronics
描述:
MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
生命周期:
制造商新产品。
数据表:
STH260N6F6-2 数据表
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更多信息:
STH260N6F6-2 更多信息 STH260N6F6-2 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
H2PAK-2
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
75 V
Id - 连续漏极电流：
120 A
Rds On - 漏源电阻：
2.4 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
183 nC
Pd - 功耗：
300 W
配置：
单身的
商品名：
STripFET
打包：
卷轴
系列：
STH260N6F6-2
晶体管类型：
1 N-Channel
品牌：
意法半导体
秋季时间：
62.6 ns
产品类别：
MOSFET
上升时间：
165 ns
出厂包装数量：
1000
子类别：
MOSFET
单位重量：
0.139332 oz
Tags
STH260, STH26, STH2, STH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R
*** Electronic Components
MOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
***r Electronics
Power Field-Effect Transistor, 180A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 60V, 180A, H2PAK-2, Tape and Reel
***ark
Mosfet, N Ch, 60V, 180A, H2Pak-2; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
*** Source Electronics
MOSFET N-CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 60 V 2.8 mOhm 140 nC HEXFET® Power Mosfet - D2PAK
***ineon
Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH 60V 195A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 165A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2.5V; Powe
***ark
MOSFET, N-CH, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***(Formerly Allied Electronics)
AUIRLS3036TRL N-channel MOSFET Transistor; 195 A; 270 A; 60 V; 3-Pin D2PAK
***ineon SCT
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
***roFlash
Mosfet Transistor, N Channel, 195 A, 60 V, 0.0019 Ohm, 10 V, 1 V Rohs Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking
***nell
MOSFET, N-CH, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A Automotive 3-Pin(2+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
***icroelectronics
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package
***ical
Trans MOSFET N-CH 75V 180A 3-Pin(2+Tab) H2PAK T/R
***r Electronics
Power Field-Effect Transistor, 180A I(D), 75V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Electronic Components
MOSFET N-Ch 75V 2.6mOhm 180A STripFET III
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***ical
Trans MOSFET N-CH 60V 174A 3-Pin(2+Tab) D2PAK Tube
***emi
N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
STripFET VI™ Power MOSFETs
STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET uses a trench technology for high efficiency and low RDS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. They have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
STMicroelectronics STripFET VI Power MOSFETs
型号 制造商 描述 库存 价格
STH260N6F6-2
DISTI # V79:2366_17780693		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		1000
  • 1000:$3.2030
  • 500:$3.5640
  • 250:$4.0210
  • 100:$4.4080
  • 10:$4.8330
  • 1:$5.5980
STH260N6F6-2
DISTI # 497-11217-1-ND		STMicroelectronicsMOSFET N-CH 60V 180A H2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		655In Stock
  • 500:$4.5139
  • 100:$5.5744
  • 10:$6.7980
  • 1:$7.6100
STH260N6F6-2
DISTI # 497-11217-6-ND		STMicroelectronicsMOSFET N-CH 60V 180A H2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		655In Stock
  • 500:$4.5139
  • 100:$5.5744
  • 10:$6.7980
  • 1:$7.6100
STH260N6F6-2
DISTI # 497-11217-2-ND		STMicroelectronicsMOSFET N-CH 60V 180A H2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$3.6960
STH260N6F6-2
DISTI # 30598315		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		1000
  • 500:$3.7357
  • 200:$3.9270
  • 50:$4.0418
  • 10:$5.1510
  • 4:$7.1018
STH260N6F6-2
DISTI # 26112994		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		1000
  • 1000:$3.2030
  • 500:$3.5640
  • 250:$4.0210
  • 100:$4.4080
  • 10:$4.8330
  • 3:$5.5980
STH260N6F6-2
DISTI # STH260N6F6-2		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R - Tape and Reel (Alt: STH260N6F6-2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.1900
  • 2000:$3.1900
  • 4000:$3.1900
  • 6000:$3.1900
  • 10000:$3.1900
STH260N6F6-2
DISTI # 94T3416		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R - Bulk (Alt: 94T3416)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$6.9300
  • 10:$5.8800
  • 25:$5.0800
  • 50:$4.6600
  • 100:$3.9800
  • 250:$3.3100
  • 500:$3.1300
STH260N6F6-2
DISTI # 94T3416		STMicroelectronicsMOSFET Transistor, N Channel, 180 A, 60 V, 0.0016 ohm, 10 V, 2 V , RoHS Compliant: Yes858
  • 1:$6.9300
  • 10:$5.8800
  • 25:$5.0800
  • 50:$4.6600
  • 100:$3.9800
  • 250:$3.3100
  • 500:$3.1300
STH260N6F6-2
DISTI # 511-STH260N6F6-2		STMicroelectronicsMOSFET N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
RoHS: Compliant		900
  • 1:$6.7200
  • 10:$5.5600
  • 100:$5.0600
  • 250:$4.5600
  • 500:$4.1000
  • 1000:$3.3600
STH260N6F6-2
DISTI # 2098252		STMicroelectronicsMOSFET, N CH, 75V, 180A, H2PAK
RoHS: Compliant		224
  • 1:£5.6400
  • 10:£4.2500
  • 100:£3.8700
  • 250:£3.4800
  • 500:£3.1400
STH260N6F6-2
DISTI # 2098252		STMicroelectronicsMOSFET, N CH, 75V, 180A, H2PAK
RoHS: Compliant		135
  • 1:$10.6400
  • 10:$8.8000
  • 100:$8.0200
  • 250:$7.2200
  • 500:$6.4900
  • 1000:$5.3200
STH260N6F6-2
DISTI # C1S730200517687		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.9000
  • 200:$3.0800
  • 1:$5.5700
STH260N6F6-2
DISTI # C1S730200648321		STMicroelectronicsTrans MOSFET N-CH 60V 180A 3-Pin(2+Tab) H2PAK T/R
RoHS: Compliant		1000
  • 500:$3.5640
  • 100:$4.4080
  • 1:$5.5980
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可用性
库存:
897
订购:
2880
输入数量:
STH260N6F6-2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$6.35
US$6.35
10
US$5.40
US$54.00
100
US$4.68
US$468.00
250
US$4.44
US$1 110.00
500
US$3.98
US$1 990.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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