SQJ912

Mfr. #:: SQJ912
制造商:: Vishay Siliconix
描述:
生命周期:: 制造商新产品。
数据表:: SQJ912 数据表
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产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: 卷带 (TR)

单位重量: 0.017870 oz

安装方式: 贴片/贴片

商品名: 沟槽场效应晶体管

包装盒: PowerPAKR SO-8 Dual

技术: 硅

工作温度: -55°C ~ 175°C (TJ)

安装型: 表面贴装

供应商-设备-包: PowerPAKR SO-8 Dual

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 48W

漏源电压 Vdss: 40V

输入电容-Ciss-Vds: 1835pF @ 20V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 30A

Rds-On-Max-Id-Vgs: 9.3 mOhm @ 9.7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

栅极电荷-Qg-Vgs: 38nC @ 10V

钯功耗: 48 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 9 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 30 A

Vds-漏-源-击穿电压: 40 V

VGS-th-Gate-Source-Threshold-Voltage: 2 V

Rds-On-Drain-Source-Resistance: 9.3 mOhms

晶体管极性: N通道

典型关断延迟时间: 23 ns

典型开启延迟时间: 10 ns

Qg-门电荷: 25.6 nC

Tags: SQJ912, SQJ91, SQJ9, SQJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
SQJ912BEP-T1_GE3 DISTI # V72:2272_21388902	Vishay Intertechnologies	SQJ912BEP-T1_GE3	3000	75000:$0.4551 30000:$0.4603 15000:$0.4656 6000:$0.4709 3000:$0.4762 1000:$0.5291 500:$0.6758 250:$0.8056 100:$0.8873 50:$1.0046 25:$1.0536 10:$1.1168 1:$1.4338
SQJ912AEP-T1-GE3 DISTI # V72:2272_09219249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	2986	1000:$0.4845 500:$0.6828 250:$0.8162 100:$0.9068 25:$1.0419 10:$1.1576 1:$1.4338
SQJ912AEP-T1-GE3 DISTI # V36:1790_09219249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	0
SQJ912BEP-T1_GE3 DISTI # V99:2348_21388902	Vishay Intertechnologies	SQJ912BEP-T1_GE3	0
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5369In Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5369In Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$0.4704 3000:$0.4939
SQJ912BEP-T1_GE3 DISTI # SQJ912BEP-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CH DUAL 40V PPSO-8L RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$0.4704 3000:$0.4939
SQJ912BEP-T1_GE3 DISTI # SQJ912BEP-T1_GE3CT-ND	Vishay Siliconix	MOSFET N-CH DUAL 40V PPSO-8L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912BEP-T1_GE3 DISTI # SQJ912BEP-T1_GE3DKR-ND	Vishay Siliconix	MOSFET N-CH DUAL 40V PPSO-8L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5451 500:$0.6904 100:$0.8358 10:$1.0720 1:$1.2000
SQJ912BEP-T1_GE3 DISTI # 30209833	Vishay Intertechnologies	SQJ912BEP-T1_GE3	3000	15000:$0.5005 6000:$0.5062 3000:$0.5119 1000:$0.5688 500:$0.7265 250:$0.8660 100:$0.9538 50:$1.0799 25:$1.1326 14:$1.2006
SQJ912AEP-T1-GE3 DISTI # 31686249	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C RoHS: Compliant	2986	1000:$0.5208 500:$0.7340 250:$0.8774 100:$0.9748 25:$1.1200 14:$1.2444
SQJ912AEP-T1_GE3 DISTI # SQJ912AEP-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ912AEP-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 18000	30000:$0.4308 18000:$0.4427 12000:$0.4553 6000:$0.4746 3000:$0.4891
SQJ912BEP-T1_GE3 DISTI # SQJ912BEP-T1_GE3	Vishay Intertechnologies	TrenchFET Power MOSFET Automotive N-Channel Dual 40V VDS ±12V VGS 30A ID 175°C 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SQJ912BEP-T1_GE3) Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.4299 18000:$0.4419 12000:$0.4549 6000:$0.4739 3000:$0.4889
SQJ912BEP-T1_GE3 DISTI # 59AC7661	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C MOSFE	0	10000:$0.4270 6000:$0.4370 4000:$0.4540 2000:$0.5040 1000:$0.5550 1:$0.5780
SQJ912BEP-T1_GE3 DISTI # 81AC2822	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, 40V, 30A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes	15	500:$0.7170 250:$0.7750 100:$0.8330 50:$0.9190 25:$1.0000 10:$1.0900 1:$1.3200
SQJ912AEP-T2_GE3 DISTI # 59AC7660	Vishay Intertechnologies	DUAL N-CHANNEL 40-V (D-S) 175C MOSFET	0	2500:$0.4640 1000:$0.5040 500:$0.5850 100:$0.6690 50:$0.7560 25:$0.8340 10:$0.9110 1:$1.1800
SQJ912AEP-T1_GE3. DISTI # 23AC9821	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:48W,No. of Pins:8Pins RoHS Compliant: No	18000	30000:$0.4310 18000:$0.4430 12000:$0.4560 6000:$0.4750 1:$0.4890
SQJ912BEP-T1_GE3 DISTI # 78-SQJ912BEP-T1_GE3	Vishay Intertechnologies	MOSFET Dual N-Ch 40V AEC-Q101 Qualified RoHS: Compliant	8049	1:$1.1700 10:$0.9670 100:$0.7420 500:$0.6380 1000:$0.5030 3000:$0.4700 6000:$0.4460 9000:$0.4300
SQJ912AEP-T1_GE3 DISTI # 78-SQJ912AEP-T1_GE3	Vishay Intertechnologies	MOSFET 40V 30A 48W AEC-Q101 Qualified RoHS: Compliant	4187	1:$1.1700 10:$0.9670 100:$0.7420 500:$0.6380 1000:$0.5030 3000:$0.4700 6000:$0.4460 9000:$0.4370
SQJ912AEP-T1-GE3 DISTI # 78-SQJ912AEP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	0
SQJ912EP-T1-GE3 DISTI # 78-SQJ912EP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	0
SQJ912BEP-T1_GE3 DISTI # 2932989	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, 40V, 30A RoHS: Compliant	15	1000:$0.7480 500:$0.7910 250:$0.9270 100:$1.1400 10:$1.4500 1:$1.7500
SQJ912BEP-T1_GE3 DISTI # 2932989	Vishay Intertechnologies	MOSFET, AEC-Q101, DUAL N-CH, 40V, 30A	15	500:£0.5200 250:£0.5630 100:£0.6050 25:£0.7910 5:£0.8770
SQJ912AEP-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3 RoHS: Compliant	Americas -

图片	型号	描述
	Mfr.#: SQJ200EP-T1_GE3 OMO.#: OMO-SQJ200EP-T1-GE3	MOSFET Dual N Ch 20V Vds AEC-Q101 Qualified
	Mfr.#: SQJA38EP-T1_GE3 OMO.#: OMO-SQJA38EP-T1-GE3	MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET
	Mfr.#: SQJ431EP-T2_GE3 OMO.#: OMO-SQJ431EP-T2-GE3	MOSFET RECOMMENDED ALT 78-SQJ431AEP-T1_GE3
	Mfr.#: SQJ402EP-T1-GE3 OMO.#: OMO-SQJ402EP-T1-GE3-126	IGBT Transistors MOSFET 100V 32A 27watt N-CH Automotive
	Mfr.#: SQJ886EP-T1-GE3 OMO.#: OMO-SQJ886EP-T1-GE3-317	RF Bipolar Transistors MOSFET 40V 60A 55W TrenchFET
	Mfr.#: SQJQ402E-T1_GE3 OMO.#: OMO-SQJQ402E-T1-GE3-VISHAY	MOSFET N-CH 40V 200A POWERPAK8
	Mfr.#: SQJ414EP-T1_GE3 OMO.#: OMO-SQJ414EP-T1-GE3-VISHAY	MOSFET N-CH 30V 30A POWERPAKSOL
	Mfr.#: SQJ459EP OMO.#: OMO-SQJ459EP-1190	全新原装
	Mfr.#: SQJ968EPT1GE3 OMO.#: OMO-SQJ968EPT1GE3-1190	Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SQJA92EP OMO.#: OMO-SQJA92EP-1190	全新原装

SQJ912

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes