IPB65R190CFDAATMA1

Mfr. #:: IPB65R190CFDAATMA1
制造商:: Infineon Technologies
描述:: MOSFET N-CH TO263-3
生命周期:: 制造商新产品。
数据表:: IPB65R190CFDAATMA1 数据表
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更多信息:: IPB65R190CFDAATMA1 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: IPB65R190

打包: 卷轴

部分别名: IPB65R190CFDA IPB65R190CFDAXT SP000928264

单位重量: 0.068654 oz

商品名: 酷摩

包装盒: TO-263-3

技术: 硅

通道数: 1 Channel

晶体管型: 1 N-Channel

Id 连续漏极电流: 57.2 A

Vds-漏-源-击穿电压: 650 V

Rds-On-Drain-Source-Resistance: 190 mOhms

晶体管极性: N通道

Tags: IPB65R190CFDA, IPB65R190CF, IPB65R19, IPB65R1, IPB65, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB65R190CFDAATMA1 描述

***ure Electronics: Single N-Channel 650V 190 mOhm 68 nC CoolMOS Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R

***p One Stop Global: Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) TO-263 T/R

***et Europe: MOS Power Transistors HV (>= 200V)

***ronik: N-CH 650V 18A 190mOhm TO263-3

***i-Key: MOSFET N-CH TO263-3

***ineon: 650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting

IPB65R190CFDAATMA1 更多信息

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

型号	制造商	描述	库存	价格
IPB65R190CFDAATMA1 DISTI # IPB65R190CFDAATMA1-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$2.1215
IPB65R190CFDAATMA1 DISTI # IPB65R190CFDAATMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R190CFDAATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.8900 2000:$1.8900 4000:$1.7900 6000:$1.6900 10000:$1.6900
IPB65R190CFDAATMA1 DISTI # SP000928264	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP000928264) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€2.3900 2000:€1.8900 4000:€1.6900 6000:€1.6900 10000:€1.4900
IPB65R190CFDAATMA1 DISTI # IPB65R190CFDA	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPB65R190CFDA) RoHS: Compliant Min Qty: 1000	Asia - 0
IPB65R190CFDAATMA1 DISTI # 726-IPB65R190CFDAATM	Infineon Technologies AG	MOSFET N-Ch 650V 57.2A D2PAK-2 RoHS: Compliant	0	1:$3.6500 10:$3.1000 100:$2.6900 250:$2.5500 500:$2.2900 1000:$1.9300
IPB65R190CFDA DISTI # 726-IPB65R190CFDA	Infineon Technologies AG	MOSFET N-Ch 650V 57.2A D2PAK-2 RoHS: Compliant	0	1:$3.6500 10:$3.1000 100:$2.6900 250:$2.5500 500:$2.2900 1000:$1.9300

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