STW43NM60N

Mfr. #:: STW43NM60N
制造商:: STMicroelectronics
描述:: IGBT Transistors MOSFET N-channel 600V Power MDmesh
生命周期:: 制造商新产品。
数据表:: STW43NM60N 数据表
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更多信息:: STW43NM60N 更多信息 STW43NM60N Product Details

产品属性
属性值

制造商: 英石

产品分类: FET - 单

系列: N 通道 MDmesh

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 255 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 60 ns

上升时间: 45 ns

VGS-栅极-源极-电压: 30 V

Id 连续漏极电流: 35 A

Vds-漏-源-击穿电压: 600 V

Rds-On-Drain-Source-Resistance: 88 mOhms

晶体管极性: N通道

典型关断延迟时间: 130 ns

典型开启延迟时间: 25 ns

通道模式: 增强

Tags: STW43NM60N, STW43NM6, STW43NM, STW43, STW4, STW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STW43NM60N 描述

***ark: MOSFET Transistor, N Channel, 17.5 A, 600 V, 75 mohm, 10 V, 3 V

***ure Electronics: N-Channel 600 V 88 mOhm Flange Mount MDmesh II Power MOSFET - TO-247

***p One Stop Global: Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Tube

***Components: MOSFET N-Channel 600V 35A TO247

***i-Key: MOSFET N-CH 600V 35A TO-247

***et: TRANS MOSFET N-CH 600V 35A

***ronik: N-CH 600V 35A 88mOhm TO247-3 RoHSconf

***nell: MOSFET N CH 600V 35A TO-247; Transistor Polarity:N Channel; On State Resistance:75mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:17.5A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:600V; Typ Voltage Vgs th:3V; Voltage Vgs Rds on Measurement:10V

***ment14 APAC: MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-247; Power Dissipation Pd:255W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Market price

型号	制造商	描述	库存	价格
STW43NM60ND DISTI # 497-8461-5-ND	STMicroelectronics	MOSFET N-CH 600V 35A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	1In Stock	1:$12.7100
STW43NM60N DISTI # 497-8460-5-ND	STMicroelectronics	MOSFET N-CH 600V 35A TO-247 RoHS: Compliant Min Qty: 600 Container: Tube	Limited Supply - Call
STW43NM60N DISTI # 511-STW43NM60N	STMicroelectronics	MOSFET N-channel 600V Power MDmesh RoHS: Compliant	0
STW43NM60ND DISTI # 511-STW43NM60ND	STMicroelectronics	MOSFET N-channel 600V, 35A FDMesh II RoHS: Compliant	50	1:$11.0300 10:$10.1400 25:$9.7200 100:$8.5600 250:$8.1400 500:$7.6200
STW43NM60N	STMicroelectronics		119
STW43NM60ND	STMicroelectronics	POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 600V, 0.088OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247	44	15:$16.1720 5:$17.4832 1:$19.6686
STW43NM60N	ST Microwave Corporation	Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC RoHS: Compliant	Europe - 90

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