IRF7350PBF

Mfr. #:: IRF7350PBF
制造商:: Infineon Technologies
描述:: MOSFET N/P-CH 100V 8SOIC
生命周期:: 制造商新产品。
数据表:: IRF7350PBF 数据表
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ECAD Model:

产品属性
属性值

制造商: 红外线

产品分类: FET - 阵列

系列: 十六进制

打包: 管子

包装盒: 8-SOIC (0.154", 3.90mm Width)

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

供应商-设备-包: 8-SO

FET型: N 和 P 沟道

最大功率: 2W

漏源电压 Vdss: 100V

输入电容-Ciss-Vds: 380pF @ 25V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 2.1A, 1.5A

Rds-On-Max-Id-Vgs: 210 mOhm @ 2.1A, 10V

Vgs-th-Max-Id: 4V @ 250μA

栅极电荷-Qg-Vgs: 28nC @ 10V

Tags: IRF7350, IRF735, IRF73, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7350PBF 描述

***ical: Trans MOSFET N/P-CH 100V 2.1A/1.5A 8-Pin SOIC

***ernational Rectifier: 100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:2.1A; On Resistance, Rds(on):210mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.1A; Cont Current Id P Channel:1.5A; Current Id Max:2.1A; No. of Transistors:2; On State Resistance @ Vgs = 10V N Channel:210mohm; On State Resistance @ Vgs = 10V P Channel:480mohm; Package / Case:SOIC; Pin Configuration:1S1,2G1,3S2,4G2,(5&6)D2,(8&7)D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:8.4A; Pulse Current Idm P Channel:6A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

型号	制造商	描述	库存	价格
IRF7350PBF DISTI # IRF7350PBF-ND	Infineon Technologies AG	MOSFET N/P-CH 100V 8SOIC RoHS: Compliant Min Qty: 4085 Container: Tube	Limited Supply - Call
IRF7350PBF DISTI # 70016990	Infineon Technologies AG	100V DUAL N- AND P- CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE RoHS: Compliant	0	1:$0.9930 2:$0.9730 5:$0.9430 10:$0.9030 25:$0.8440
IRF7350PBF DISTI # 942-IRF7350PBF	Infineon Technologies AG	MOSFET 100V DUAL N- & P- CH HEXFET RoHS: Compliant	0
IRF7350PBF DISTI # 1013368	Infineon Technologies AG	MOSFET, DUAL, NP, SO-8 RoHS: Compliant	0	1:$1.2700 10:$1.0500 100:$0.8500 250:$0.7600 500:$0.6740 1000:$0.6270

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