 | |  | |
| PartNumber | IRF7350PBF | IRF7350TRPBF | IRF7351PBF |
| Description | MOSFET 100V DUAL N- & P- CH HEXFET | MOSFET MOSFT DUAL N/PCh 100V 2.1A | MOSFET 2N-CH 60V 8A 8-SOIC |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 2.1 A | 2.1 A | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 19 nC, 21 nC | 19 nC | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Reel | Tube Alternate Packaging |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | 2 N-Channel |
| Type | Power MOSFET | - | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 2.4 S, 1.1 S | - | - |
| Fall Time | 20 ns, 40 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns, 13 ns | - | - |
| Factory Pack Quantity | 4085 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns, 30 ns | - | - |
| Typical Turn On Delay Time | 6.7 ns, 25 ns | - | - |
| Part # Aliases | SP001554224 | SP001563632 | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |
| Series | - | - | HEXFETR |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 1330pF @ 30V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 8A |
| Rds On Max Id Vgs | - | - | 17.8 mOhm @ 8A, 10V |
| Vgs th Max Id | - | - | 4V @ 50μA |
| Gate Charge Qg Vgs | - | - | 36nC @ 10V |
| Pd Power Dissipation | - | - | 2 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 8 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 17.8 mOhms |
| Qg Gate Charge | - | - | 24 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF7351TRPBF | MOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual | |
| IRF7351PBF | MOSFET 2N-CH 60V 8A 8-SOIC | ||
| IRF7353D1 | MOSFET N-CH 30V 6.5A 8-SOIC | ||
| IRF7353D1TR | MOSFET N-CH 30V 6.5A 8-SOIC | ||
| IRF7353D1TRPBF | MOSFET N-CH 30V 6.5A 8-SOIC | ||
| IRF7353D2PBF | MOSFET N-CH 30V 6.5A 8-SOIC | ||
| IRF7350PBF | MOSFET N/P-CH 100V 8SOIC | ||
| IRF7350TRPBF | MOSFET N/P-CH 100V 2.1A 8-SOIC | ||
| IRF7351TRPBF | MOSFET 2N-CH 60V 8A 8-SOIC | ||
| IRF7353D1PBF | MOSFET N-CH 30V 6.5A 8-SOIC | ||
| IRF7353D2 | MOSFET N-CH 30V 6.5A 8-SOIC | ||
| IRF7353D2TRPBF | MOSFET N-CH 30V 6.5A 8-SOIC | ||
Infineon / IR |
IRF7350PBF | MOSFET 100V DUAL N- & P- CH HEXFET | |
| IRF7353D2TRPBF | MOSFET MOSFT w/Schttky 30V 6.5A 29mOhm 22nC | ||
| IRF7353D1TRPBF | MOSFET MOSFT w/Schttky 30V 6.5A 32mOhm 22nC | ||
| IRF7350TRPBF | MOSFET MOSFT DUAL N/PCh 100V 2.1A | ||
| IRF7351TRPBF-CUT TAPE | 全新原装 | ||
| IRF7353D2TRPBF. | 全新原装 | ||
| IRF7353D2QTRPBF. | 全新原装 | ||
| IRF7353D2QTRPBF | 全新原装 | ||
| IRF7353D2QPBF | 全新原装 | ||
| IRF7353D1TRPBF. | 全新原装 | ||
| IRF7351TRPBF. | 全新原装 | ||
| IRF7350 | 2.1 A, 100 V, 0.21 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET | ||
| IRF7353D2TR | 全新原装 |