STW18N60DM2

Mfr. #:: STW18N60DM2
制造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 12A
生命周期:: 制造商新产品。
数据表:: STW18N60DM2 数据表
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更多信息:: STW18N60DM2 更多信息 STW18N60DM2 Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: 晶体管 - FET、MOSFET - 单

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 1 N-Channel

钯功耗: 90 W

最高工作温度: + 150 C

秋季时间: 32.5 ns

上升时间: 8 ns

VGS-栅极-源极-电压: +/- 25 V

Id 连续漏极电流: 12 A

Vds-漏-源-击穿电压: 600 V

VGS-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 295 mOhms

晶体管极性: N通道

典型关断延迟时间: 9.5 ns

典型开启延迟时间: 13.5 ns

Qg-门电荷: 20 nC

通道模式: 增强

Tags: STW18N6, STW18, STW1, STW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STW18N60DM2 描述

***icroelectronics: N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 Tube

***ark: Ptd High Voltage

STW18N60DM2 更多信息

MDmesh DM2 Power MOSFETs: STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

型号	制造商	描述	库存	价格
STW18N60DM2 DISTI # 497-16340-5-ND	STMicroelectronics	MOSFET N-CH 600V 12A RoHS: Compliant Min Qty: 1 Container: Tube	565In Stock	1020:$1.4913 510:$1.7999 120:$2.3142 30:$2.5713 1:$3.1900
STW18N60DM2 DISTI # STW18N60DM2	STMicroelectronics	Trans MOSFET N-CH 600V 12A 3-Pin TO-247 Tube (Alt: STW18N60DM2) RoHS: Compliant Min Qty: 30 Container: Tube	Europe - 0	30:€1.5900 60:€1.2900 120:€1.1900 180:€1.0900 300:€1.0900
STW18N60DM2 DISTI # STW18N60DM2	STMicroelectronics	Trans MOSFET N-CH 600V 12A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW18N60DM2) RoHS: Not Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$1.3900 1200:$1.2900 2400:$1.1900 3600:$1.1900 6000:$1.0900
STW18N60DM2 DISTI # 511-STW18N60DM2	STMicroelectronics	MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package RoHS: Compliant	183	1:$2.7600 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600
STW18N60DM2	ST Microwave Corporation	Power Field-Effect Transistor RoHS: Compliant	Europe - 300
STW18N60DM2 DISTI # 2531115	STMicroelectronics	MOSFET, N-CH, 600V, 12A, TO-247 RoHS: Compliant	6	1:£2.2500 10:£1.6100 100:£1.5200 250:£1.4300 500:£1.2500
STW18N60DM2 DISTI # 2531115	STMicroelectronics	MOSFET, N-CH, 600V, 12A, TO-247 RoHS: Compliant	6	1:$5.0900 30:$4.1000 120:$3.6900 510:$2.8700 1020:$2.3800

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