IPB065N03LG

IPB065N03LG
Mfr. #:
IPB065N03LG
制造商:
INFINEON
描述:
Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命周期:
制造商新产品。
数据表:
IPB065N03LG 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
Tags
IPB065N03, IPB065N0, IPB065, IPB06, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
IPB065N03LGATMA1
DISTI # V72:2272_06384772
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1510
  • 1000:$0.5250
  • 500:$0.6378
  • 250:$0.7055
  • 100:$0.7073
  • 25:$0.8707
  • 10:$0.8740
  • 1:$0.9878
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11927In Stock
  • 500:$0.7976
  • 100:$1.0285
  • 10:$1.3010
  • 1:$1.4700
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11927In Stock
  • 500:$0.7976
  • 100:$1.0285
  • 10:$1.3010
  • 1:$1.4700
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
11000In Stock
  • 1000:$0.6113
IPB065N03LGATMA1
DISTI # 26195584
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1510
  • 1000:$0.5250
  • 500:$0.6378
  • 250:$0.7055
  • 100:$0.7073
  • 25:$0.8707
  • 14:$0.8740
IPB065N03LGXT
DISTI # IPB065N03LGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB065N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.5329
  • 2000:$0.5139
  • 4000:$0.4949
  • 6000:$0.4789
  • 10000:$0.4699
IPB065N03LGATMA1
DISTI # SP000254709
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000254709)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€0.7769
  • 2000:€0.6059
  • 4000:€0.5409
  • 6000:€0.4919
  • 10000:€0.4619
IPB065N03LGATMA1
DISTI # 47W3466
Infineon Technologies AGMOSFET, N CHANNEL, 30V, 50A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes553
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.7970
  • 500:$0.7040
IPB065N03LGInfineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
1000
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
IPB065N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
2000
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
IPB065N03L G
DISTI # 726-IPB065N03LG
Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
1908
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.7970
  • 500:$0.7040
  • 1000:$0.5560
IPB065N03LGATMA1
DISTI # 726-IPB065N03LGATMA1
Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
2886
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.7970
  • 500:$0.7040
  • 1000:$0.5560
IPB065N03LGATMA1
DISTI # C1S322000626490
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
1510
  • 250:$0.7055
  • 100:$0.7073
  • 25:$0.8707
  • 10:$0.8740
IPB065N03LGATMA1
DISTI # 2212897
Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-263-3
RoHS: Compliant
553
  • 5:£0.5400
  • 25:£0.4900
  • 100:£0.3690
  • 250:£0.3490
  • 500:£0.3270
IPB065N03LGATMA1
DISTI # 2212897
Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-263-3
RoHS: Compliant
553
  • 1:$1.9400
  • 10:$1.6500
  • 100:$1.2600
  • 500:$1.1200
  • 1000:$0.8800
  • 2000:$0.7810
  • 10000:$0.7520
  • 25000:$0.7280
图片 型号 描述
IPB065N15N3 G

Mfr.#: IPB065N15N3 G

OMO.#: OMO-IPB065N15N3-G

MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
IPB06N03LA G

Mfr.#: IPB06N03LA G

OMO.#: OMO-IPB06N03LA-G

MOSFET N-Ch 25V 50A D2PAK-2
IPB060N15N5ATMA1

Mfr.#: IPB060N15N5ATMA1

OMO.#: OMO-IPB060N15N5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 150V 136A TO263-7
IPB06N03LB G

Mfr.#: IPB06N03LB G

OMO.#: OMO-IPB06N03LB-G-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 50A D2PAK
IPB065N03LG

Mfr.#: IPB065N03LG

OMO.#: OMO-IPB065N03LG-1190

Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB065N15N3GE8197ATMA1

Mfr.#: IPB065N15N3GE8197ATMA1

OMO.#: OMO-IPB065N15N3GE8197ATMA1-1190

(Alt: SP001227194)
IPB067N08N3G

Mfr.#: IPB067N08N3G

OMO.#: OMO-IPB067N08N3G-1190

Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263
IPB06CNE8NG

Mfr.#: IPB06CNE8NG

OMO.#: OMO-IPB06CNE8NG-1190

全新原装
IPB06N03LB

Mfr.#: IPB06N03LB

OMO.#: OMO-IPB06N03LB-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 50A D2PAK
IPB065N15N3 G

Mfr.#: IPB065N15N3 G

OMO.#: OMO-IPB065N15N3-G-317

RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
可用性
库存:
Available
订购:
1000
输入数量:
IPB065N03LG的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.75
US$0.75
10
US$0.71
US$7.12
100
US$0.68
US$67.50
500
US$0.64
US$318.75
1000
US$0.60
US$600.00
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