CSD17507Q5A

Mfr. #:: CSD17507Q5A
描述:: MOSFET N-CH 30V 65A 8SON
生命周期:: 制造商新产品。
数据表:: CSD17507Q5A 数据表
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更多信息:: CSD17507Q5A 更多信息 CSD17507Q5A Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: FET - 单

系列: 场效应管

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: 8-PowerTDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 8-VSON (5x6)

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 3W

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 530pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 13A (Ta), 65A (Tc)

Rds-On-Max-Id-Vgs: 10.8 mOhm @ 11A, 10V

Vgs-th-Max-Id: 2.1V @ 250μA

栅极电荷-Qg-Vgs: 3.6nC @ 4.5V

钯功耗: 3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 13 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 11.8 mOhms

晶体管极性: N通道

Qg-门电荷: 2.8 nC

正向跨导最小值: 16 S

Tags: CSD17507Q, CSD17507, CSD1750, CSD175, CSD17, CSD1, CSD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

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CSD17507Q5A 描述

***as Instruments: 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm 8-VSONP -55 to 150

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications.

***p One Stop: Trans MOSFET N-CH 30V 13A 8-Pin VSONP EP T/R

***Yang: MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET

***ark: N-CHANNEL, MOSFET, 30V, 65A, SON-8

*** Stop Electro: Power Field-Effect Transistor, 13A I(D), 30V, 0.0161ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: IC REG LIN POS ADJ 250MA 8MSOP

***i-Key Marketplace: CSD17507Q5A 30V N-CHANNEL HIGH S

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56

***et Europe: Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R

***ment14 APAC: MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

***Yang: Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402

***nell: MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***emi: N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

***ure Electronics: N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 65A, 8.4 MOHM, 8.5 NC QG, D-PAK, Pb-Free

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:65W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.5nC; Current Id Max:65A; Package / Case:DPAK; Power Dissipation Pd:65W; Power Dissipation Pd:65W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ark: TAPE AND REEL / MOSFET, 30V, 25A, 4.9 mOhm, 13nC Qg, PQFN 3.3x3.3

***nell: MOSFET, N-CH, 30V, 57A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ark: Mosfet Transistor, N Channel, 21 A, 25 V, 0.0063 Ohm, 10 V, 1.9 V

***ure Electronics: IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

***(Formerly Allied Electronics): MOSFET; 25V; 57A; 8.7MOHM; 6.8 NC QG; LOGIC LEVEL; D-PAK

*** Source Electronics: Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH 25V 57A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Di

Market price

型号	描述	库存	价格
CSD17507Q5A DISTI # 296-27791-1-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10563In Stock	1000:$0.4206 500:$0.5257 100:$0.7097 10:$0.9200 1:$1.0500
CSD17507Q5A DISTI # 296-27791-6-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10563In Stock	1000:$0.4206 500:$0.5257 100:$0.7097 10:$0.9200 1:$1.0500
CSD17507Q5A DISTI # 296-27791-2-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	12500:$0.3318 5000:$0.3445 2500:$0.3700
CSD17507Q5A DISTI # CSD17507Q5A	Trans MOSFET N-CH 30V 13A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17507Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3359 5000:$0.3199 10000:$0.3089 15000:$0.2989 25000:$0.2909
CSD17507Q5A DISTI # CSD17507Q5A	Trans MOSFET N-CH 30V 13A 8-Pin SON EP T/R (Alt: CSD17507Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4679 5000:€0.3819 10000:€0.3509 15000:€0.2999 25000:€0.2799
CSD17507Q5A DISTI # 78Y9859		1993	1:$0.8700 10:$0.7200 25:$0.6350 50:$0.5490 100:$0.4640 250:$0.4330 500:$0.4030 1000:$0.3720
CSD17507Q5A	30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs	5000	1000:$0.2600 750:$0.3000 500:$0.3700 250:$0.4500 100:$0.4900 25:$0.5700 10:$0.6200 1:$0.6900
CSD17507Q5A DISTI # 595-CSD17507Q5A	MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET RoHS: Compliant	2345	1:$0.8700 10:$0.7200 100:$0.4640 1000:$0.3720 2500:$0.3370
CSD17507Q5A	Power Field-Effect Transistor, 13A I(D), 30V, 0.0161ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	5360	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
CSD17507Q5A DISTI # 1854245	MOSFET,N CH,30V,65A,SON-8 RoHS: Not Compliant	2038	5:£0.6120 25:£0.5530 100:£0.3510 250:£0.3190 500:£0.2870

图片	型号	描述
	Mfr.#: CSD17307Q5A OMO.#: OMO-CSD17307Q5A	MOSFET 30V N Channel NexFET Power MOSFET
	Mfr.#: CSD17578Q5A OMO.#: OMO-CSD17578Q5A	MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 9.3mOhm 8-VSONP
	Mfr.#: CSD17313Q2Q1T OMO.#: OMO-CSD17313Q2Q1T	MOSFET Automotive 30-V N-Channel NexFET Power MOSFET 6-WSON -55 to 150
	Mfr.#: CSD17322Q5A OMO.#: OMO-CSD17322Q5A	MOSFET 30V,NCh Nex FET Pwr MOSFET
	Mfr.#: CSD17382F4 OMO.#: OMO-CSD17382F4	MOSFET 30V, N ch NexFET MOSFETG , single LGA 1.0 x 0.6mm, 67mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD17313Q2T OMO.#: OMO-CSD17313Q2T-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 5A
	Mfr.#: CSD17506Q OMO.#: OMO-CSD17506Q-TEXAS-INSTRUMENTS	全新原装
	Mfr.#: CSD17556Q5B/CSD16321 OMO.#: OMO-CSD17556Q5B-CSD16321-TEXAS-INSTRUMENTS	全新原装
	Mfr.#: CSD17577Q5AT OMO.#: OMO-CSD17577Q5AT-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 60A 8VSON
	Mfr.#: CSD17510Q5A OMO.#: OMO-CSD17510Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8SON

CSD17507Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes