CSD17510Q5A

Mfr. #:: CSD17510Q5A
描述:: MOSFET N-CH 30V 100A 8SON
生命周期:: 制造商新产品。
数据表:: CSD17510Q5A 数据表
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更多信息:: CSD17510Q5A 更多信息 CSD17510Q5A Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: FET - 单

系列: 场效应管

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: 8-PowerTDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 8-VSON (5x6)

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 3W

晶体管型: 1 N-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: 1250pF @ 15V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 20A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 5.2 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.1V @ 250μA

栅极电荷-Qg-Vgs: 8.3nC @ 4.5V

钯功耗: 3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 20 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 5.4 mOhms

晶体管极性: N通道

Qg-门电荷: 6.4 nC

正向跨导最小值: 59 S

Tags: CSD17510Q, CSD1751, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17510Q5A 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

CSD17510Q5A NexFET™ Power MOSFETs: OMO Electronic CSD17510Q5A N-channel NexFET™ power MOSFETs are 30V devices designed to minimize losses in power conversion applications. TI CSD17510Q5A N-channel NexFET power MOSFETs feature 20V gate-to-source voltage (VGS) and ultralow gate charge total (Qg) and gate charge gate to drain (Qgd). TI CSD17510Q5A NexFET MOSFETs optimized for control and synchronous FET applications and are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems. RDS(on) vs VGSLearn More

Market price

型号	描述	库存	价格
CSD17510Q5A DISTI # 296-27792-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.4989 2500:$0.5251
CSD17510Q5A DISTI # 296-27792-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call	1000:$0.5795 500:$0.7341 100:$0.9466 10:$1.1980 1:$1.3500
CSD17510Q5A DISTI # 296-27792-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call	1000:$0.5795 500:$0.7341 100:$0.9466 10:$1.1980 1:$1.3500
CSD17510Q5A DISTI # CSD17510Q5A	Trans MOSFET N-CH 30V 20A 8-Pin SON EP T/R (Alt: CSD17510Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17510Q5A DISTI # CSD17510Q5A	Trans MOSFET N-CH 30V 20A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17510Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4939 5000:$0.4699 10000:$0.4549 15000:$0.4399 25000:$0.4269
CSD17510Q5A DISTI # CSD17510Q5A	Trans MOSFET N-CH 30V 20A 8-Pin SON EP T/R (Alt: CSD17510Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6859 5000:€0.5609 10000:€0.5149 15000:€0.4409 25000:€0.4119
CSD17510Q5A	30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs	2500	1000:$0.3900 750:$0.4300 500:$0.5400 250:$0.6700 100:$0.7200 25:$0.8400 10:$0.9100 1:$1.0200
CSD17510Q5A DISTI # 595-CSD17510Q5A	MOSFET 30V NChannel Lo Side NexFET Pwr MOSFET RoHS: Compliant	17	1:$1.1200 10:$0.9550 100:$0.7340 500:$0.6480 1000:$0.5120
CSD17510Q5A	Power Field-Effect Transistor, 20A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	10249	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500

图片	型号	描述
	Mfr.#: CSD17301Q5A OMO.#: OMO-CSD17301Q5A	MOSFET 30V N Channel NexFET Pwr MOSFET
	Mfr.#: CSD17306Q5A OMO.#: OMO-CSD17306Q5A	MOSFET 30V N Channel NexFET Power MOSFET
	Mfr.#: CSD17578Q5A OMO.#: OMO-CSD17578Q5A	MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 9.3mOhm 8-VSONP
	Mfr.#: CSD17577Q5AT OMO.#: OMO-CSD17577Q5AT	MOSFET 30V NCH NexFET
	Mfr.#: CSD17303Q5 OMO.#: OMO-CSD17303Q5	MOSFET 30V N Channel NexFET Power MOSFET
	Mfr.#: CSD17510 OMO.#: OMO-CSD17510-TEXAS-INSTRUMENTS	全新原装
	Mfr.#: CSD17313Q2 OMO.#: OMO-CSD17313Q2-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R
	Mfr.#: CSD17507Q5A OMO.#: OMO-CSD17507Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 65A 8SON
	Mfr.#: CSD17553Q5A OMO.#: OMO-CSD17553Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 23.5A 8SON
	Mfr.#: CSD17556Q5B OMO.#: OMO-CSD17556Q5B-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 8-VSON

CSD17510Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes