NGTB35N65FL2

NGTB35N65FL2
Mfr. #:
NGTB35N65FL2
制造商:
ON Semiconductor
描述:
生命周期:
制造商新产品。
数据表:
NGTB35N65FL2 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
安森美半导体
产品分类
IGBT - 单
系列
-
打包
管子
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
输入类型
标准
安装型
通孔
供应商-设备-包
TO-247
配置
单身的
最大功率
300W
反向恢复时间trr
68ns
电流收集器 Ic-Max
70A
电压收集器发射极击穿最大值
650V
IGBT型
海沟场停止
电流收集器脉冲Icm
120A
Vce-on-Max-Vge-Ic
2V @ 15V, 35A
开关能源
840μJ (on), 280μJ (off)
栅极电荷
125nC
Td-on-off-25°C
72ns/132ns
测试条件
400V, 35A, 10 Ohm, 15V
钯功耗
300 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
集电极-发射极-电压-VCEO-Max
650 V
集电极-发射极-饱和-电压
2.2 V
25-C 时的连续集电极电流
70 A
栅极-发射极-漏电流
200 nA
最大栅极发射极电压
20 V
连续集电极电流 Ic-Max
70 A
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
NGTB35N65FL2WG
DISTI # V99:2348_07304077
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
70
  • 2500:$1.5430
  • 1000:$1.5680
  • 500:$1.8560
  • 250:$2.0730
  • 100:$2.1820
  • 10:$2.5080
  • 1:$3.2450
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WGOS-ND
ON SemiconductorIGBT 650V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
89In Stock
  • 2520:$1.8288
  • 510:$2.2769
  • 120:$2.6747
  • 30:$3.0860
  • 10:$3.2640
  • 1:$3.6300
NGTB35N65FL2WG
DISTI # 33099406
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
70
  • 4:$3.2450
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 360
Container: Tube
Americas - 0
  • 720:$1.5900
  • 1080:$1.5900
  • 1800:$1.5900
  • 3600:$1.5900
  • 360:$1.6900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 270
Container: Tube
Asia - 0
  • 13500:$2.1415
  • 6750:$2.1772
  • 2700:$2.2522
  • 1350:$2.3327
  • 810:$2.4191
  • 540:$2.5121
  • 270:$2.6126
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG)
Min Qty: 202
Container: Bulk
Americas - 0
  • 606:$1.4900
  • 1010:$1.4900
  • 2020:$1.4900
  • 202:$1.5900
  • 404:$1.5900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG
ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€1.4900
  • 500:€1.5900
  • 50:€1.6900
  • 100:€1.6900
  • 25:€1.7900
  • 10:€1.8900
  • 1:€2.0900
NGTB35N65FL2WG
DISTI # 86X0861
ON Semiconductor650V/35A FAST IGBT FSII T / TUBE0
  • 500:$1.4600
  • 250:$1.5000
  • 100:$1.8000
  • 50:$2.0800
  • 25:$2.2100
  • 10:$2.5200
  • 1:$2.9200
NGTB35N65FL2WG.
DISTI # 61AC1092
ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
  • 500:$1.4600
  • 250:$1.5000
  • 100:$1.8000
  • 50:$2.0800
  • 25:$2.2100
  • 10:$2.5200
  • 1:$2.9200
NGTB35N65FL2WG
DISTI # 863-NGTB35N65FL2WG
ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
RoHS: Compliant
862
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5600
  • 250:$2.4300
  • 500:$2.1700
  • 1000:$1.8300
  • 2500:$1.7400
NGTB35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
2880
  • 1000:$1.9100
  • 500:$2.0100
  • 100:$2.0900
  • 25:$2.1800
  • 1:$2.3500
NGTB35N65FL2WG
DISTI # 8427898P
ON SemiconductorIGBT FIELD STOP II 650V 35A DIODE TO247, TU284
  • 40:£1.7950
  • 20:£1.8900
NGTB35N65FL2WGON Semiconductor 2150
  • 1:$4.2100
  • 100:$3.1600
  • 500:$2.7100
  • 1000:$2.5300
图片 型号 描述
NGTB35N65FL2WG

Mfr.#: NGTB35N65FL2WG

OMO.#: OMO-NGTB35N65FL2WG

IGBT Transistors 650V/35A FAST IGBT FSII T
NGTB35N60FL2WG

Mfr.#: NGTB35N60FL2WG

OMO.#: OMO-NGTB35N60FL2WG

IGBT Transistors 600V/35A FAST IGBT FSII T
NGTB35N65FL2WG

Mfr.#: NGTB35N65FL2WG

OMO.#: OMO-NGTB35N65FL2WG-ON-SEMICONDUCTOR

IGBT Transistors 650V/35A FAST IGBT FSII T
NGTB35N60FL2WG

Mfr.#: NGTB35N60FL2WG

OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR

IGBT Transistors 600V/35A FAST IGBT FSII T
NGTB35N60FL2W

Mfr.#: NGTB35N60FL2W

OMO.#: OMO-NGTB35N60FL2W-1190

全新原装
NGTB35N65FL2

Mfr.#: NGTB35N65FL2

OMO.#: OMO-NGTB35N65FL2-1190

全新原装
可用性
库存:
Available
订购:
1000
输入数量:
NGTB35N65FL2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
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