NGTB35N60FL2WG

Mfr. #:: NGTB35N60FL2WG
制造商:: ON Semiconductor
描述:: IGBT Transistors 600V/35A FAST IGBT FSII T
生命周期:: 制造商新产品。
数据表:: NGTB35N60FL2WG 数据表
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更多信息:: NGTB35N60FL2WG 更多信息

产品属性
属性值

制造商: 安森美半导体

产品分类: IGBT - 单

系列: -

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 300W

反向恢复时间trr: 68ns

电流收集器 Ic-Max: 70A

电压收集器发射极击穿最大值: 600V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 120A

Vce-on-Max-Vge-Ic: 2V @ 15V, 35A

开关能源: 840μJ (on), 280μJ (off)

栅极电荷: 125nC

Td-on-off-25°C: 72ns/132ns

测试条件: 400V, 35A, 10 Ohm, 15V

钯功耗: 300 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 2.2 V

25-C 时的连续集电极电流: 70 A

栅极-发射极-漏电流: 200 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 70 A

Tags: NGTB35, NGTB3, NGTB, NGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB35N60FL2WG 更多信息

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

型号	制造商	描述	库存	价格
NGTB35N60FL2WG DISTI # V99:2348_07286008	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	28	500:$2.4110 250:$2.6690 100:$2.8160 10:$3.1950 1:$4.0403
NGTB35N60FL2WG DISTI # NGTB35N60FL2WGOS-ND	ON Semiconductor	IGBT 600V 70A 300W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2520:$2.2147 510:$2.7572 120:$3.2389 30:$3.7373 10:$3.9530 1:$4.4000
NGTB35N60FL2WG DISTI # 25862784	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	28	500:$2.5918 250:$2.8692 100:$3.0272 10:$3.4346 3:$3.9485
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N60FL2WG) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 10	300:$1.9530 150:$2.0024 90:$2.0281 60:$2.0544 30:$2.0678
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube (Alt: NGTB35N60FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.7900 100:€1.9900 500:€1.9900 50:€2.0900 25:€2.1900 10:€2.2900 1:€2.4900
NGTB35N60FL2WG DISTI # NGTB35N60FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N60FL2WG) Min Qty: 143 Container: Bulk	Americas - 0	1430:$2.0900 286:$2.1900 429:$2.1900 715:$2.1900 143:$2.2900
NGTB35N60FL2WG. DISTI # 29AC8927	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	0	300:$1.9800 150:$2.0400 62:$2.0600 32:$2.0900 1:$2.1000
NGTB35N60FL2WG DISTI # 70600202	ON Semiconductor	NGTB35N60FL2WG,IGBT Transistor,70 A 600 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$2.9900 10:$2.8400 20:$2.7000 50:$2.5600 100:$2.4300
NGTB35N60FL2WG DISTI # 863-NGTB35N60FL2WG	ON Semiconductor	IGBT Transistors 600V/35A FAST IGBT FSII T RoHS: Compliant	28	1:$4.1800 10:$3.5500 100:$3.0800 250:$2.9200 500:$2.6200
NGTB35N60FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	3510	1000:$2.3200 500:$2.4400 100:$2.5400 25:$2.6500 1:$2.8500
NGTB35N60FL2WG DISTI # 8427894P	ON Semiconductor	IGBT FIELD STOP II 600V 35A DIODE TO247, TU	32	100:£1.6350 50:£1.8100 20:£1.8500 10:£1.8900
NGTB35N60FL2WG DISTI # 2452036	ON Semiconductor	600V/35A FAST IGBT FSII T RoHS: Compliant	0	500:$4.0300 250:$4.4900 100:$4.7400 10:$5.4600 1:$6.4300
NGTB35N60FL2WG DISTI # 2452036	ON Semiconductor	600V/35A FAST IGBT FSII T RoHS: Compliant	0	500:£2.0100 250:£2.2400 100:£2.3600 10:£2.7200 1:£3.5800

图片	型号	描述
	Mfr.#: NGTB35N65FL2WG OMO.#: OMO-NGTB35N65FL2WG	IGBT Transistors 650V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N60FL2WG OMO.#: OMO-NGTB35N60FL2WG	IGBT Transistors 600V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N65FL2WG OMO.#: OMO-NGTB35N65FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 650V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N60FL2WG OMO.#: OMO-NGTB35N60FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 600V/35A FAST IGBT FSII T
	Mfr.#: NGTB35N60FL2W OMO.#: OMO-NGTB35N60FL2W-1190	全新原装
	Mfr.#: NGTB35N65FL2 OMO.#: OMO-NGTB35N65FL2-1190	全新原装

NGTB35N60FL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes