IPD70R600P7SAUMA1

IPD70R600P7SAUMA1
Mfr. #:
IPD70R600P7SAUMA1
制造商:
Infineon Technologies
描述:
MOSFET
生命周期:
制造商新产品。
数据表:
IPD70R600P7SAUMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPD70R600P7SAUMA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-252-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
700 V
Id - 连续漏极电流:
8.5 A
Rds On - 漏源电阻:
490 mOhms
Vgs th - 栅源阈值电压:
2.5 V
Vgs - 栅源电压:
16 V
Qg - 门电荷:
10.5 nC
最低工作温度:
- 40 C
最高工作温度:
+ 150 C
Pd - 功耗:
43.1 W
配置:
单身的
频道模式:
增强
商品名:
酷摩
打包:
卷轴
高度:
2.3 mm
长度:
6.5 mm
系列:
CoolMOS P7
晶体管类型:
1 N-Channel
宽度:
6.22 mm
品牌:
英飞凌科技
秋季时间:
23 ns
湿气敏感:
是的
产品类别:
MOSFET
上升时间:
5.5 ns
出厂包装数量:
2500
子类别:
MOSFET
典型关断延迟时间:
63 ns
典型的开启延迟时间:
14 ns
第 # 部分别名:
IPD70R600P7S SP001491636
单位重量:
0.011993 oz
Tags
IPD70R600P, IPD70R6, IPD70R, IPD70, IPD7, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 700V, 8.5A, 150Deg C/43.1W; Transistor Polarity:n Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.5A; On Resistance Rds(On):0.49Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Developed to serve todays and especially tomorrows trends in flyback topologies the new 700V CoolMOS P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS P7 enables best fit for target applications in terms of: | Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
700V CoolMOS™ P7 MOSFETs
Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型号 制造商 描述 库存 价格
IPD70R600P7SAUMA1
DISTI # V72:2272_16668136
Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
  • 500:$0.3545
  • 250:$0.3938
  • 100:$0.4084
  • 25:$0.6002
  • 10:$0.6016
  • 1:$0.7022
IPD70R600P7SAUMA1
DISTI # V36:1790_16668136
Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R0
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 2500:$0.3841
    IPD70R600P7SAUMA1
    DISTI # 30281696
    Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R2500
    • 2500:$0.2640
    IPD70R600P7SAUMA1
    DISTI # 27460734
    Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
    • 500:$0.3811
    • 250:$0.4233
    • 100:$0.4390
    • 25:$0.6452
    • 24:$0.6467
    IPD70R600P7SAUMA1
    DISTI # SP001491636
    Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: SP001491636)
    RoHS: Compliant
    Min Qty: 2500
    Europe - 50
    • 2500:€0.3979
    • 5000:€0.3249
    • 10000:€0.2979
    • 15000:€0.2749
    • 25000:€0.2559
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1
    Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET - Tape and Reel (Alt: IPD70R600P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.3099
    • 5000:$0.2979
    • 10000:$0.2879
    • 15000:$0.2779
    • 25000:$0.2729
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7S
    Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: IPD70R600P7S)
    RoHS: Compliant
    Min Qty: 2500
    Asia - 0
      IPD70R600P7SAUMA1
      DISTI # 16AC3358
      Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2863
      • 1000:$0.3450
      • 500:$0.3740
      • 250:$0.4020
      • 100:$0.4310
      • 50:$0.5100
      • 25:$0.5890
      • 10:$0.6680
      • 1:$0.8000
      IPD70R600P7SAUMA1
      DISTI # 726-IPD70R600P7AUMA1
      Infineon Technologies AGMOSFET
      RoHS: Compliant
      4722
      • 1:$0.8000
      • 10:$0.6680
      • 100:$0.4310
      • 1000:$0.3450
      IPD70R600P7SAUMA1
      DISTI # 2750412
      Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant
      2863
      • 100:£0.4150
      • 25:£0.6580
      • 5:£0.7230
      IPD70R600P7SAUMA1
      DISTI # 2750412
      Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant
      2863
      • 1000:$0.5800
      • 500:$0.7250
      • 100:$0.9780
      • 10:$1.2700
      • 1:$1.4600
      图片 型号 描述
      IPD95R1K2P7ATMA1

      Mfr.#: IPD95R1K2P7ATMA1

      OMO.#: OMO-IPD95R1K2P7ATMA1

      MOSFET 950 V CoolMOS P7
      IPD95R750P7ATMA1

      Mfr.#: IPD95R750P7ATMA1

      OMO.#: OMO-IPD95R750P7ATMA1

      MOSFET 950 V CoolMOS P7
      IPB60R080P7ATMA1

      Mfr.#: IPB60R080P7ATMA1

      OMO.#: OMO-IPB60R080P7ATMA1

      MOSFET HIGH POWER_NEW
      IPN70R2K0P7SATMA1

      Mfr.#: IPN70R2K0P7SATMA1

      OMO.#: OMO-IPN70R2K0P7SATMA1

      MOSFET CONSUMER
      IPU95R1K2P7AKMA1

      Mfr.#: IPU95R1K2P7AKMA1

      OMO.#: OMO-IPU95R1K2P7AKMA1

      MOSFET 950 V CoolMOS P7
      ES1JFL

      Mfr.#: ES1JFL

      OMO.#: OMO-ES1JFL

      Rectifiers 600V 1A Super Fast Rectifier
      IPD70R900P7SAUMA1

      Mfr.#: IPD70R900P7SAUMA1

      OMO.#: OMO-IPD70R900P7SAUMA1

      MOSFET
      BAT54CHMFHT116

      Mfr.#: BAT54CHMFHT116

      OMO.#: OMO-BAT54CHMFHT116

      Schottky Diodes & Rectifiers 30V Vr 0.2A Io SBD SOT-23 0.1A
      IPU95R750P7AKMA1

      Mfr.#: IPU95R750P7AKMA1

      OMO.#: OMO-IPU95R750P7AKMA1

      MOSFET 950 V CoolMOS P7
      IPB60R080P7ATMA1

      Mfr.#: IPB60R080P7ATMA1

      OMO.#: OMO-IPB60R080P7ATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH TO263-3
      可用性
      库存:
      Available
      订购:
      1986
      输入数量:
      IPD70R600P7SAUMA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.80
      US$0.80
      10
      US$0.67
      US$6.68
      100
      US$0.43
      US$43.10
      1000
      US$0.34
      US$345.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
      从...开始
      最新产品
      Top