FDFME3N311ZT

Mfr. #:: FDFME3N311ZT
制造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 1.8A 6MICROFET
生命周期:: 制造商新产品。
数据表:: FDFME3N311ZT 数据表
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产品属性
属性值

制造商: 仙童

产品分类: FET - 单

打包: 卷轴

单位重量: 0.000889 oz

安装方式: 贴片/贴片

包装盒: microFET-6

技术: 硅

通道数: 1 Channel

配置: 单用肖特基二极管

晶体管型: 1 N-Channel

钯功耗: 1.1 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 2.8 ns

上升时间: 16 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 1.6 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 299 mOhms

晶体管极性: N通道

典型关断延迟时间: 35 ns

典型开启延迟时间: 12 ns

正向跨导最小值: 2.8 S

通道模式: 增强

Tags: FDFME, FDFM, FDF

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FDFME3N311ZT 描述

***Semiconductor: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes

***rchild Semiconductor: This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

型号	制造商	描述	库存	价格
FDFME3N311ZT DISTI # FDFME3N311ZTTR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.2525
FDFME3N311ZT DISTI # FDFME3N311ZTCT-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZTDKR-ND	ON Semiconductor	MOSFET N-CH 30V 1.8A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME3N311ZT DISTI # FDFME3N311ZT	ON Semiconductor	Trans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.4469 10000:€0.3479 20000:€0.2889 30000:€0.2429 50000:€0.2249
FDFME3N311ZT DISTI # 73R3644	ON Semiconductor	MOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes	0	1:$0.6400 25:$0.5270 50:$0.4340 100:$0.3400 250:$0.3170 500:$0.2950 1000:$0.2720
FDFME3N311ZT DISTI # 64R3000	ON Semiconductor	MOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes	0	1:$0.2860 5000:$0.2840 10000:$0.2500 25000:$0.2250 50000:$0.2130
FDFME3N311ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60662	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:£0.2410
FDFME3N311ZT DISTI # 1813536	ON Semiconductor	MOSFET Transistor RoHS: Compliant	0	5000:$0.9780

FDFME3N311ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes