SIE832DF-T1-E3

SIE832DF-T1-E3
Mfr. #:
SIE832DF-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 40V 50A 104W
生命周期:
制造商新产品。
数据表:
SIE832DF-T1-E3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
Tags
SIE832, SIE83, SIE8, SIE
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 0.0055 Ohms Surface Mount Power Mosfet - PolarPAK
***ical
Trans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R
***et Europe
Trans MOSFET N-CH 40V 23.6A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 40V 50A 10-POLARPAK
***
N-CHANNEL 40-V (D-S) MOSFET
***ark
N Channel Mosfet, 40V, 50A Polarpak, Full Reel; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0046Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:103A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.2V; Case Style:PolarPAK; Termination Type:SMD; Charge, Gate N-channel:25nC; Current, Idm Pulse:80A; Power Dissipation:104mW; Power, Pd:104W; Resistance, Rds on @ Vgs = 10V:0.0055ohm; Resistance, Rds on @ Vgs = 4.5V:0.007ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V
***ment14 APAC
MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:103A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:104W; Transistor Case Style:PolarPAK; SVHC:No SVHC (20-Jun-2011); N-channel Gate Charge:25nC; On State Resistance @ Vgs = 4.5V:7mohm; On State resistance @ Vgs = 10V:5.5mohm; Package / Case:PolarPAK; Power Dissipation Pd:104W; Power Dissipation Pd:104mW; Pulse Current Idm:80A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1.5V
型号 制造商 描述 库存 价格
SIE832DF-T1-E3
DISTI # V72:2272_07434213
Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R1400
  • 1000:$1.3300
  • 500:$1.3940
  • 250:$1.4570
  • 100:$1.6190
  • 25:$1.7990
  • 10:$1.8380
  • 1:$2.0430
SIE832DF-T1-E3
DISTI # SIE832DF-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIE832DF-T1-E3
    DISTI # SIE832DF-T1-E3CT-ND
    Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SIE832DF-T1-E3
      DISTI # SIE832DF-T1-E3DKR-ND
      Vishay SiliconixMOSFET N-CH 40V 50A 10-POLARPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SIE832DF-T1-E3
        DISTI # 25778472
        Vishay IntertechnologiesTrans MOSFET N-CH Si 40V 23.6A 10-Pin PolarPAK T/R1400
        • 1000:$1.3300
        • 500:$1.3940
        • 250:$1.4570
        • 100:$1.6190
        • 25:$1.7990
        • 10:$1.8380
        • 5:$2.0430
        SIE832DF-T1-E3
        DISTI # 69W7163
        Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
        • 1:$3.2000
        • 25:$2.6500
        • 50:$2.4200
        • 100:$2.1800
        • 250:$2.1100
        • 500:$1.9000
        SIE832DF-T1-E3.
        DISTI # 30AC0113
        Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 50A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0046ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
          SIE832DF-T1-E3
          DISTI # 781-SIE832DF-T1-E3
          Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PolarPAK
          RoHS: Compliant
          2741
          • 1:$3.2000
          • 10:$2.6500
          • 100:$2.1800
          • 250:$2.1100
          • 500:$1.9000
          SIE832DF-T1-E3
          DISTI # 2459395
          Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POLARPAK-10
          RoHS: Compliant
          0
          • 3000:£1.6700
          SIE832DF-T1-E3
          DISTI # 2459395
          Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POLARPAK-10
          RoHS: Compliant
          0
          • 1:$5.0700
          • 10:$4.1900
          • 100:$3.4600
          • 250:$3.3400
          • 500:$3.0100
          • 3000:$3.0100
          SIE832DF-T1-E3
          DISTI # 1497648
          Vishay IntertechnologiesMOSFET, N, POLAR PAK
          RoHS: Compliant
          0
          • 1:$5.0700
          • 10:$4.1900
          • 100:$3.4600
          • 250:$3.3400
          • 500:$3.0100
          • 3000:$3.0100
          SIE832DF-T1-E3
          DISTI # C1S803600875210
          Vishay IntertechnologiesMOSFETs
          RoHS: Compliant
          1400
          • 250:$1.4570
          • 100:$1.6190
          • 25:$1.7990
          • 10:$1.8380
          • 1:$2.0400
          SIE832DF-T1-E3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PolarPAKAmericas -
            图片 型号 描述
            SIE832DF-T1-E3

            Mfr.#: SIE832DF-T1-E3

            OMO.#: OMO-SIE832DF-T1-E3

            MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
            SIE832DF-T1-GE3

            Mfr.#: SIE832DF-T1-GE3

            OMO.#: OMO-SIE832DF-T1-GE3

            MOSFET RECOMMENDED ALT 781-SIE818DF-GE3
            SIE832DF-T1-E3

            Mfr.#: SIE832DF-T1-E3

            OMO.#: OMO-SIE832DF-T1-E3-VISHAY

            RF Bipolar Transistors MOSFET 40V 50A 104W
            SIE832DF-T1-GE3

            Mfr.#: SIE832DF-T1-GE3

            OMO.#: OMO-SIE832DF-T1-GE3-VISHAY

            RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V
            SIE832DF

            Mfr.#: SIE832DF

            OMO.#: OMO-SIE832DF-1190

            全新原装
            SIE832DFT1GE3

            Mfr.#: SIE832DFT1GE3

            OMO.#: OMO-SIE832DFT1GE3-1190

            Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            可用性
            库存:
            Available
            订购:
            3500
            输入数量:
            SIE832DF-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格(美元)
            数量
            单价
            小计金额
            1
            US$2.00
            US$2.00
            10
            US$1.90
            US$18.95
            100
            US$1.80
            US$179.55
            500
            US$1.70
            US$847.90
            1000
            US$1.60
            US$1 596.00
            由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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