 |  | | |
| PartNumber | SIE832DF-T1-E3 | SIE830DF-T1-E3 | SIE830DF-T1-GE3 |
| Description | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | RF Bipolar Transistors MOSFET 30V 50A 104W | RF Bipolar Transistors MOSFET 30V 120A 104W 4.2mohm @ 10V |
| Manufacturer | Vishay | Vishay / Siliconix | Vishay / Siliconix |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | E | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PolarPAK-10 | - | - |
| Tradename | TrenchFET, PolarPAK | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 0.8 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIE | - | - |
| Width | 5.16 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SIE832DF-E3 | - | - |
| Part Aliases | - | SIE830DF-E3 | SIE830DF-GE3 |
| Package Case | - | PolarPAK-10 | PolarPAK-10 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 5.2 W | 5.2 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 95 ns | - |
| Rise Time | - | 105 ns | - |
| Vgs Gate Source Voltage | - | 12 V | 12 V |
| Id Continuous Drain Current | - | 27 A | 27 A |
| Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
| Rds On Drain Source Resistance | - | 4.2 mOhms | 4.2 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 70 ns | - |
| Typical Turn On Delay Time | - | 35 ns | - |
| Channel Mode | - | Enhancement | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIE836DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI7450DP-T1-GE3 | |
| SIE832DF-T1-E3 | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | ||
| SIE832DF-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | ||
Vishay |
SIE830DF-T1-E3 | RF Bipolar Transistors MOSFET 30V 50A 104W | |
| SIE830DF-T1-GE3 | RF Bipolar Transistors MOSFET 30V 120A 104W 4.2mohm @ 10V | ||
| SIE832DF-T1-E3 | RF Bipolar Transistors MOSFET 40V 50A 104W | ||
| SIE832DF-T1-GE3 | RF Bipolar Transistors MOSFET 40V 103A 104W 5.5mohm @ 10V | ||
| SIE836DF-T1-E3 | RF Bipolar Transistors MOSFET 200V 18.3A 104W 130mohm @ 10V | ||
| SIE836DF-T1-GE3 | MOSFET N-CH 200V 18.3A POLARPAK | ||
| SIE832DF | 全新原装 | ||
| SIE832DFT1GE3 | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SIE836DF | 全新原装 |