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APT50GN60BG

APT50GN60BG
Mfr. #:
APT50GN60BG
制造商:
Microchip / Microsemi
描述:
IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
生命周期:
制造商新产品。
数据表:
APT50GN60BG 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT50GN60BG DatasheetAPT50GN60BG Datasheet (P4-P6)
ECAD Model:
产品属性
属性值
制造商：
微芯片
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
1.5 V
最大栅极发射极电压：
30 V
25 C 时的连续集电极电流：
107 A
Pd - 功耗：
366 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
打包：
管子
连续集电极电流 Ic 最大值：
107 A
高度：
5.31 mm
长度：
21.46 mm
工作温度范围：
- 55 C to + 175 C
宽度：
16.26 mm
品牌：
微芯片/Microsemi
连续集电极电流：
107 A
栅极-发射极漏电流：
600 nA
产品类别：
IGBT晶体管
出厂包装数量：
1
子类别：
IGBT
单位重量：
1.340411 oz
Tags
APT50GN6, APT50GN, APT50G, APT50, APT5, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 107A 366000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT50GN60 Series 600 V 107 A 325 nC NPT Trench and Field Stop IGBT - TO-247-3
***rochip
IGBT Fieldstop Low Frequency Single 600 V 50 A TO-247
***nsix Microsemi
Insulated Gate Bipolar Transistor, 107A I(C), 600V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
***nell
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 76A 268000mW 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 600V, 76A, TO-247AD-3; DC Collector Current: 76A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 268W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
***ark
Igbt, 600V, 76A, 268W, To-247Ad; Continuous Collector Current:76A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:268W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4069-EPBF..
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***(Formerly Allied Electronics)
G6.2, 600V, 50A, CO-PAK-247AD | Infineon IRGP6650D-EPBF
***i-Key Marketplace
IRGP6650 - DISCRETE IGBT WITH AN
***nell
IGBT, 600V, 80A, TO-247AC-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 306W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ical
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 90A 328.9W TO247A
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ment14 APAC
IGBT, HIGH SPEED, 600V, 90A, TO-247A; Transistor Type:IGBT; DC Collector Current:90A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:328.9W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-
型号 制造商 描述 库存 价格
APT50GN60BG
DISTI # V99:2348_09096449		Microsemi CorporationTrans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
RoHS: Compliant		118
  • 2500:$3.0640
  • 1000:$3.1360
  • 500:$3.7430
  • 250:$4.2470
  • 100:$4.7510
  • 25:$5.1670
  • 10:$5.3080
  • 1:$6.6580
APT50GN60BG
DISTI # APT50GN60BG-ND		Microsemi CorporationIGBT 600V 107A 366W TO247
RoHS: Compliant
Min Qty: 120
Container: Tube		Temporarily Out of Stock
  • 120:$5.2693
APT50GN60BG
DISTI # 30738095		Microsemi CorporationTrans IGBT Chip N-CH 600V 107A 3-Pin(3+Tab) TO-247
RoHS: Compliant		118
  • 2500:$3.0640
  • 1000:$3.1360
  • 500:$3.7430
  • 250:$4.2470
  • 100:$4.7510
  • 25:$5.1670
  • 10:$5.3080
  • 2:$6.6580
APT50GN60BG
DISTI # 494-APT50GN60BG		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
RoHS: Compliant		248
  • 1:$6.7100
  • 10:$5.3900
  • 25:$5.3000
  • 100:$4.9200
  • 250:$4.4400
  • 500:$3.9500
  • 1000:$3.3400
  • 2500:$3.0900
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 IGBT TRENCH 650V 80A TO247
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Mfr.#: B32674D4335K000

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 4 CHANNEL, 10-MHZ, LOW-NOISE, RR
可用性
库存:
167
订购:
2150
输入数量:
APT50GN60BG的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$6.71
US$6.71
10
US$5.39
US$53.90
25
US$5.30
US$132.50
100
US$4.92
US$492.00
250
US$4.44
US$1 110.00
500
US$3.95
US$1 975.00
1000
US$3.34
US$3 340.00
2500
US$3.09
US$7 725.00
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