APT50GN stock, APT50GN, APT50GN60BG


PartNumber	APT50GN60BDQ2G	APT50GN120L2DQ2G	APT50GN120B2G
Description	IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS	IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS	IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS
Manufacturer	Microchip	Microchip	Microchip
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Technology	Si	Si	Si
Package / Case	TO-247-3	TO-264-3	-
Mounting Style	Through Hole	Through Hole	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	600 V	1.2 kV	-
Collector Emitter Saturation Voltage	1.5 V	1.7 V	-
Maximum Gate Emitter Voltage	30 V	30 V	-
Continuous Collector Current at 25 C	107 A	134 A	-
Pd Power Dissipation	366 W	543 W	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 150 C	-
Packaging	Tube	Tube	Tube
Continuous Collector Current Ic Max	107 A	134 A	-
Height	5.31 mm	5.21 mm	-
Length	21.46 mm	26.49 mm	-
Operating Temperature Range	- 55 C to + 175 C	- 55 C to + 150 C	-
Width	16.26 mm	20.5 mm	-
Brand	Microchip / Microsemi	Microchip / Microsemi	Microchip / Microsemi
Continuous Collector Current	107 A	134 A	-
Gate Emitter Leakage Current	600 nA	600 nA	-
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	1	1	1
Subcategory	IGBTs	IGBTs	IGBTs
Unit Weight	1.340411 oz	0.373904 oz	-

Search Part Number : "APT50GN", Match & Start with "APT50GN" - Total : 13

制造商	型号	描述
Microchip / Microsemi	APT50GN60BG	IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
	APT50GN60BDQ2G	IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
	APT50GN120L2DQ2G	IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
	APT50GN120B2G	IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS
	APT50GN60BDQ2G	IGBT Transistors
	APT50GN60BG	IGBT Transistors
	APT50GN120L2DQ2G	IGBT Transistors
	APT50GN120B2G	IGBT 1200V 134A 543W TO-247
	APT50GN120B2	全新原装
	APT50GN120L2DQ2	全新原装
	APT50GN60BD	全新原装
	APT50GN60BDQ2	全新原装
	APT50GN60BDQ2G IKW50N6	全新原装

APT50GN