T2G6003028-FL

T2G6003028-FL
Mfr. #:
T2G6003028-FL
制造商:
Qorvo
描述:
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
生命周期:
制造商新产品。
数据表:
T2G6003028-FL 数据表
交货:
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ECAD Model:
更多信息:
T2G6003028-FL 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
系列
T2G
打包
托盘
部分别名
1100007
技术
氮化镓碳化硅
晶体管型
HEMT
Tags
T2G6003028-F, T2G6003, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T2G6003028-FL
DISTI # 772-T2G6003028-FL
QorvoRF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
RoHS: Compliant
108
  • 1:$157.9200
  • 25:$142.5200
图片 型号 描述
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6003028-FS

Mfr.#: T2G6003028-FS

OMO.#: OMO-T2G6003028-FS

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG

Mfr.#: T2G6001528-SG

OMO.#: OMO-T2G6001528-SG-318

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6000528-Q3, EVAL BOAR

Mfr.#: T2G6000528-Q3, EVAL BOAR

OMO.#: OMO-T2G6000528-Q3-EVAL-BOAR-1190

全新原装
T2G6000528-XCC-1-Q3

Mfr.#: T2G6000528-XCC-1-Q3

OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

全新原装
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

全新原装
T2G6003028-FS EVAL BOARD

Mfr.#: T2G6003028-FS EVAL BOARD

OMO.#: OMO-T2G6003028-FS-EVAL-BOARD-1152

RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
可用性
库存:
Available
订购:
4500
输入数量:
T2G6003028-FL的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$213.78
US$213.78
10
US$203.09
US$2 030.91
100
US$192.40
US$19 240.20
500
US$181.71
US$90 856.50
1000
US$171.02
US$171 024.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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