T2G6001528-Q3

T2G6001528-Q3
Mfr. #:
T2G6001528-Q3
制造商:
Qorvo
描述:
RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
生命周期:
制造商新产品。
数据表:
T2G6001528-Q3 数据表
交货:
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ECAD Model:
更多信息:
T2G6001528-Q3 更多信息
产品属性
属性值
制造商
TriQuint (Qorvo)
产品分类
晶体管 - FET、MOSFET - 单
系列
T2G
打包
托盘
部分别名
1100001
技术
氮化镓碳化硅
晶体管型
HEMT
Tags
T2G6001528-Q, T2G6001, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC- 6 GHz, 18 W, 9 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
T2G6001528-Q3
DISTI # T2G6001528-Q3
QorvoTrans JFET N-CH 32V 5KA 2-Pin NI-200 (Alt: T2G6001528-Q3)
RoHS: Compliant
Min Qty: 100
Asia - 0
    T2G6001528-Q3
    DISTI # 772-T2G6001528-Q3
    QorvoRF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
    RoHS: Compliant
    0
    • 1:$105.7500
    • 25:$95.4400
    T2G6001528-Q3 EVAL BOARD
    DISTI # 772-T2G6001528-Q3EB
    QorvoRF Development Tools DC-6.0GHz 18 Watt 28V GaN Eval Brd
    RoHS: Compliant
    0
    • 1:$875.0000
    图片 型号 描述
    T2G6001528-SG

    Mfr.#: T2G6001528-SG

    OMO.#: OMO-T2G6001528-SG

    RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
    T2G6003028-FL

    Mfr.#: T2G6003028-FL

    OMO.#: OMO-T2G6003028-FL-318

    RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
    T2G6001528-SG

    Mfr.#: T2G6001528-SG

    OMO.#: OMO-T2G6001528-SG-318

    RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
    T2G6001528-SG-EVB

    Mfr.#: T2G6001528-SG-EVB

    OMO.#: OMO-T2G6001528-SG-EVB-1152

    RF Development Tools
    T2G6000528-Q3

    Mfr.#: T2G6000528-Q3

    OMO.#: OMO-T2G6000528-Q3-1152

    RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
    T2G6000528-XCC-1-Q3

    Mfr.#: T2G6000528-XCC-1-Q3

    OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

    全新原装
    T2G6001528-Q3,EVB1 5-6GH

    Mfr.#: T2G6001528-Q3,EVB1 5-6GH

    OMO.#: OMO-T2G6001528-Q3-EVB1-5-6GH-1190

    全新原装
    T2G6003028

    Mfr.#: T2G6003028

    OMO.#: OMO-T2G6003028-1190

    全新原装
    T2G6003028-FL-EVB

    Mfr.#: T2G6003028-FL-EVB

    OMO.#: OMO-T2G6003028-FL-EVB-1190

    全新原装
    T2G6003028-FS EVAL BOARD

    Mfr.#: T2G6003028-FS EVAL BOARD

    OMO.#: OMO-T2G6003028-FS-EVAL-BOARD-1152

    RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
    可用性
    库存:
    Available
    订购:
    2000
    输入数量:
    T2G6001528-Q3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$143.16
    US$143.16
    10
    US$136.00
    US$1 360.02
    100
    US$128.84
    US$12 884.40
    500
    US$121.69
    US$60 843.00
    1000
    US$114.53
    US$114 528.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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