STGW40H120F2

Mfr. #:: STGW40H120F2
制造商:: STMicroelectronics
描述:: IGBT Transistors IGBT & Power Bipola
生命周期:: 制造商新产品。
数据表:: STGW40H120F2 数据表
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更多信息:: STGW40H120F2 更多信息 STGW40H120F2 Product Details

产品属性
属性值

制造商: 意法半导体

产品分类: IGBT - 单

系列: 900-1300V IGBTs

打包: 管子

单位重量: 1.340411 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 468W

反向恢复时间trr: -

电流收集器 Ic-Max: 80A

电压收集器发射极击穿最大值: 1200V

IGBT型: 海沟场停止

电流收集器脉冲Icm: 160A

Vce-on-Max-Vge-Ic: 2.6V @ 15V, 40A

开关能源: 1mJ (on), 1.32mJ (off)

栅极电荷: 187nC

Td-on-off-25°C: 18ns/152ns

测试条件: 600V, 40A, 10 Ohm, 15V

钯功耗: 468 W

最高工作温度: + 175 C

最低工作温度: - 55 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.1 V

25-C 时的连续集电极电流: 80 A

栅极-发射极-漏电流: 250 nA

最大栅极发射极电压: 20 V

连续集电极电流 Ic-Max: 80 A

Tags: STGW40H1, STGW40H, STGW40, STGW4, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW40H120F2 描述

***p One Stop Japan: Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

***va Crawler: Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

***et Europe: Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube

***ronik: IGBT 1200V 80A 2.1V TO247

***i-Key: IGBT 1200V 40A HS TO-247

***ark: Ptd High Voltage

STGW40H120F2 更多信息

IGBT H Series: STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Market price

型号	制造商	描述	库存	价格
STGW40H120F2 DISTI # 30608731	STMicroelectronics	Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	5	4:$6.6428
STGW40H120F2 DISTI # 497-14716-5-ND	STMicroelectronics	IGBT 1200V 40A HS TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	510:$6.6727 120:$7.6629 30:$8.8253 10:$9.2560 1:$10.2500
STGW40H120F2 DISTI # STGW40H120F2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120F2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€4.3900 500:€4.7900 100:€4.8900 50:€5.0900 25:€5.2900 10:€5.5900 1:€6.0900
STGW40H120F2 DISTI # STGW40H120F2	STMicroelectronics	Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120F2) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$5.1900 3000:$5.2900 1800:$5.4900 1200:$5.7900 600:$6.0900
STGW40H120F2 DISTI # 79X6451	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$5.3300 250:$5.5000 100:$6.5600 50:$7.0600 25:$7.5500 10:$8.2900 1:$9.2300
STGW40H120F2 DISTI # 511-STGW40H120F2	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed RoHS: Compliant	1	1:$9.7500 10:$8.8100 25:$8.4000 100:$7.2900 250:$6.9700 500:$6.3500 1000:$5.5300

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