STGW40H1 stock, STGW40H1, STGW40H120DF2


PartNumber	STGW40H120DF2	STGW40H120F2
Description	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Manufacturer	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	Y
Technology	Si	Si
Package / Case	TO-247-3	TO-247-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V
Collector Emitter Saturation Voltage	2.1 V	2.1 V
Maximum Gate Emitter Voltage	20 V	20 V
Continuous Collector Current at 25 C	80 A	80 A
Pd Power Dissipation	468 W	468 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Series	STGW40H120DF2	STGW40H120F2
Packaging	Tube	Tube
Continuous Collector Current Ic Max	40 A	80 A
Brand	STMicroelectronics	STMicroelectronics
Gate Emitter Leakage Current	250 nA	250 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	600	600
Subcategory	IGBTs	IGBTs
Unit Weight	1.340411 oz	1.340411 oz

Search Part Number : "STGW40H1", Match & Start with "STGW40H1" - Total : 5

制造商	型号	描述
STMicroelectronics	STGW40H120DF2	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
	STGW40H120F2	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
	STGW40H120DF2	IGBT 1200V 40A HS TO-247
	STGW40H120F2	IGBT Transistors IGBT & Power Bipola
	STGW40H120DF	全新原装

STGW40H1