STD4NK60ZT4

Mfr. #:: STD4NK60ZT4
制造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 4A DPAK
生命周期:: 制造商新产品。
数据表:: STD4NK60ZT4 数据表
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更多信息:: STD4NK60ZT4 更多信息 STD4NK60ZT4 Product Details

产品属性
属性值

制造商: 英石

产品分类: FET - 单

Tags: STD4NK60ZT, STD4NK60Z, STD4NK60, STD4NK6, STD4NK, STD4N, STD4, STD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STD4NK60ZT4 描述

***itex: Transistor: N-MOSFET; unipolar; 600V; 4A; 2ohm; 70W; -55+150 deg.C; SMD; TO252(DPAK)

***icroelectronics: N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in DPAK

***th Star Micro: Transistor MOSFET N-CH 600V 4A 3-Pin (2+Tab) DPAK T/R

***ure Electronics: STD4NK60Z Series 600 V 2 Ohm 4 A N-Channel SuperMesh Power MosFet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:70W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4A; On State resistance @ Vgs = 10V:2ohm; Package / Case:DPAK; Power Dissipation Pd:70W; Power Dissipation Pd:70W; Pulse Current Idm:16A; Termination Type:SMD; Voltage Vds:600V; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V

***icroelectronics: N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in DPAK package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET, N, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes

***nell: MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 4.4A; On State resistance @ Vgs = 10V: 1.5ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 17.6A; Termination Type: Surface Mount Device; Voltage Vds: 500V; Voltage Vds Typ: 500V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4.5V; Voltage Vgs th Min: 3V

***ark: Mosfet Transistor, N Channel, 4.4 A, 525 V, 1.28 Ohm, 10 V, 3.75 V Rohs Compliant: Yes

***ure Electronics: N-Channel 525 V 4.4 A 1.5 Ohm 70 W Surface Mount UltraFASTmesh Mosfet - TO-252

***icroelectronics: N-channel 525 V, 1.28 Ohm, 4.4 A, DPAK UltraFASTmesh(TM) Power MOSFET

*** Source Electronics: MOSFET N-CH 525V 4.4A DPAK / Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R

***r Electronics: Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 525V, 1R28, 4.4A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.4A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 1.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

***icroelectronics: N-channel 525 V, 1.2 Ohm typ., 4.4 A SuperMESH3(TM) Power MOSFET in DPAK package

***el Electronic: STMICROELECTRONICS STD5N52K3 MOSFET Transistor, N Channel, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V

*** Source Electronics: Trans MOSFET N-CH 525V 4.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 525V 4.4A DPAK

***ure Electronics: N-Channel 525 V 1.5 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N CH, 525V, 4.4A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:525V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 4 A, 2 Ω, DPAK

***ure Electronics: FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II Mosfet - D2PAK-3

***ark: UNIFET2 600V N-CHANNEL MOSFET, DPAK - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

*** Stop Electro: Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH, 600V, 4A, 83W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

***ure Electronics: N-Channel 600 V 0.95 Ohm Surface Mount SuperFET Mosfet - TO-252-3

*** Source Electronics: Trans MOSFET N-CH 600V 4.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 4.6A DPAK

***ment14 APAC: MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:4.6A; Package / Case:DPAK; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:13.8A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

***r Electronics: Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

型号	制造商	描述	库存	价格
STD4NK60ZT4 DISTI # V36:1790_06559868	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	17500	2500:$0.6986
STD4NK60ZT4 DISTI # V72:2272_18458490	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1:$1.1838
STD4NK60ZT4 DISTI # V72:2272_06559868	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1204	1000:$0.5951 500:$0.6650 250:$0.7200 100:$0.7697 25:$0.8791 10:$0.9309 1:$1.0167
STD4NK60ZT4 DISTI # 497-5889-2-ND	STMicroelectronics	MOSFET N-CH 600V 4A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.6603
STD4NK60ZT4 DISTI # 497-5889-1-ND	STMicroelectronics	MOSFET N-CH 600V 4A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
STD4NK60ZT4 DISTI # 497-5889-6-ND	STMicroelectronics	MOSFET N-CH 600V 4A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
STD4NK60ZT4 DISTI # 30702361	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	30000	2500:$0.6098
STD4NK60ZT4 DISTI # 25667411	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	17500	10000:$0.4421 5000:$0.4912 2500:$0.5457
STD4NK60ZT4 DISTI # 30991563	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.5946 500:$0.6643 250:$0.7191 100:$0.7687 25:$0.8778 15:$0.9295
STD4NK60ZT4 DISTI # 25750902	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1204	1000:$0.5946 500:$0.6643 250:$0.7191 100:$0.7687 25:$0.8778 12:$0.9295
STD4NK60ZT4 DISTI # STD4NK60ZT4	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R (Alt: STD4NK60ZT4) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
STD4NK60ZT4 DISTI # STD4NK60ZT4	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STD4NK60ZT4) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4739 5000:$0.4519 10000:$0.4309 15000:$0.4119 25000:$0.4039
STD4NK60ZT4 DISTI # 26M3522	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 26M3522) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.2600 10:$1.1400 25:$1.0600 50:$0.9920 100:$0.9170 250:$0.8490 500:$0.7810
STD4NK60ZT4 DISTI # 26M3522	STMicroelectronics	MOSFET, N, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.3V,Power Dissipation Pd:70W , RoHS Compliant: Yes	162	1:$1.2600 10:$1.1400 25:$1.0600 50:$0.9920 100:$0.9170 250:$0.8490 500:$0.7810 1000:$0.6440
STD4NK60ZT4 DISTI # 511-STD4NK60Z	STMicroelectronics	MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH RoHS: Compliant	0	1:$1.2600 10:$1.0700 100:$0.8210 500:$0.7260 1000:$0.5730 2500:$0.5080 10000:$0.4890
STD4NK60ZT4 DISTI # 6875138P	STMicroelectronics	MOSFET N-CHANNEL 600V 4A SUPERMESH DPAK, RL	1285	25:£0.5320 50:£0.4600 125:£0.3940 250:£0.3440
STD4NK60ZT4	STMicroelectronics	RoHS: Compliant	Europe - 61338
STD4NK60ZT4	STMicroelectronics	INSTOCK	17500
STD4NK60ZT4 DISTI # 1291961	STMicroelectronics	MOSFET, N, D-PAK RoHS: Compliant	10051	1:$1.5100 25:$1.3000 100:$0.9810 250:$0.8250 1000:$0.7120 3000:$0.6850 8000:$0.6600 20000:$0.6370
STD4NK60ZT4 DISTI # C1S730200438405	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	30000	2500:$0.3730
STD4NK60ZT4 DISTI # C1S730200514671	STMicroelectronics	Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1204	250:$0.7200 100:$0.7697 10:$0.9309
STD4NK60ZT4 DISTI # 1291961	STMicroelectronics	MOSFET, N, D-PAK RoHS: Compliant	9911	5:£0.7820 25:£0.5210 100:£0.4470 250:£0.3900 500:£0.3380
STD4NK60ZT4 DISTI # XSFP00000147305	STMicroelectronics	Power Field-Effect Transistor, 4AI(D),600V,2ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-252AA RoHS: Compliant	18507	2500:$0.4700 18507:$0.4273

图片	型号	描述
	Mfr.#: STD4N90K5 OMO.#: OMO-STD4N90K5	MOSFET N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package
	Mfr.#: STD4NK50Z-1 OMO.#: OMO-STD4NK50Z-1	MOSFET N-Ch, 500V-2.4ohms Zener SuperMESH 3A
	Mfr.#: STD4NK50ZT4 OMO.#: OMO-STD4NK50ZT4-STMICROELECTRONICS	MOSFET N-CH 500V 3A DPAK
	Mfr.#: STD4N80K5-CUT TAPE OMO.#: OMO-STD4N80K5-CUT-TAPE-1190	全新原装
	Mfr.#: STD4N20 OMO.#: OMO-STD4N20-1190	全新原装
	Mfr.#: STD4N50 OMO.#: OMO-STD4N50-1190	全新原装
	Mfr.#: STD4N62K3 OMO.#: OMO-STD4N62K3-STMICROELECTRONICS	MOSFET N-CH 620V 3.8A DPAK
	Mfr.#: STD4NK60Z-D4NK60Z OMO.#: OMO-STD4NK60Z-D4NK60Z-1190	全新原装
	Mfr.#: STD4NK60ZT4. OMO.#: OMO-STD4NK60ZT4--1190	PTD HIGH VOLTAGE ROHS COMPLIANT: YES
	Mfr.#: STD4NS25 OMO.#: OMO-STD4NS25-1190	全新原装

STD4NK60ZT4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes