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STGD8NC60KDT4

STGD8NC60KDT4
Mfr. #:
STGD8NC60KDT4
制造商:
STMicroelectronics
描述:
IGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
生命周期:
制造商新产品。
数据表:
STGD8NC60KDT4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
STGD8NC60KDT4 更多信息 STGD8NC60KDT4 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
DPAK-3
安装方式：
贴片/贴片
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
最大栅极发射极电压：
20 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
系列：
STGD8NC60KD
打包：
卷轴
连续集电极电流 Ic 最大值：
15 A
高度：
2.4 mm
长度：
6.6 mm
宽度：
6.2 mm
品牌：
意法半导体
产品类别：
IGBT晶体管
出厂包装数量：
2500
子类别：
IGBT
单位重量：
0.012346 oz
Tags
STGD8NC60KD, STGD8, STGD, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
New short circuit rugged "K" series
***r Electronics
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel
***ser
Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
***nell
IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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N-channel 600 V, 7 A very fast IGBT
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IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***icroelectronics SCT
Short-circuit rugged IGBT, DPAK, Tape and Reel
***ment14 APAC
IGBT, SINGLE, 600V, 15A, TO-252-3
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***ponent Stockers USA
15 A 600 V N-CHANNEL IGBT TO-252AA
*** Stop Electro
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***nell
IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R
*** Electronics
ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins
*** Stop Electro
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 16A, TO-252-3
***nell
IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R
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10 A, 600 V short-circuit rugged IGBT
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors N Ch 600V 10A
***ark
Ptd High Voltage Rohs Compliant: Yes
***nell
IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper
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Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R
*** Electronics
ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 20A, TO-252-3
***nell
IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R
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ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 9A, TO-252-3
***nell
IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R
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4.5 A, 600 V very fast IGBT with Ultrafast diode
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3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;
***nell
IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W
型号 制造商 描述 库存 价格
STGD8NC60KDT4
DISTI # V72:2272_17751169		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2405
  • 1000:$0.5078
  • 500:$0.5377
  • 250:$0.6945
  • 100:$0.7020
  • 25:$0.8703
  • 10:$0.8806
  • 1:$1.0060
STGD8NC60KDT4
DISTI # 497-7988-1-ND		STMicroelectronicsIGBT 600V 15A 62W DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    STGD8NC60KDT4
    DISTI # 497-7988-6-ND    		STMicroelectronicsIGBT 600V 15A 62W DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      STGD8NC60KDT4
      DISTI # 497-7988-2-ND      		STMicroelectronicsIGBT 600V 15A 62W DPAK
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.5557
      STGD8NC60KDT4
      DISTI # 26936267      		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant      		2405
      • 1000:$0.5078
      • 500:$0.5377
      • 250:$0.6945
      • 100:$0.7020
      • 25:$0.8703
      • 14:$0.8806
      STGD8NC60KDT4
      DISTI # STGD8NC60KDT4      		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STGD8NC60KDT4)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.5659
      • 5000:$0.5399
      • 10000:$0.5149
      • 15000:$0.4919
      • 25000:$0.4819
      STGD8NC60KDT4
      DISTI # STGD8NC60KDT4      		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R (Alt: STGD8NC60KDT4)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.7609
      • 5000:€0.6219
      • 10000:€0.5709
      • 15000:€0.5269
      • 25000:€0.4889
      STGD8NC60KDT4
      DISTI # 61AC2093      		STMicroelectronicsIGBT, SINGLE, 600V, 15A, TO-252,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:62W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,, RoHS Compliant: Yes2400
      • 1:$1.2500
      • 10:$1.0600
      • 25:$0.9780
      • 50:$0.8950
      • 100:$0.8130
      • 250:$0.7660
      • 500:$0.7190
      • 1000:$0.5670
      STGD8NC60KDT4
      DISTI # 511-STGD8NC60KDT4      		STMicroelectronicsIGBT Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET
      RoHS: Compliant      		4884
      • 1:$1.2500
      • 10:$1.0600
      • 100:$0.8130
      • 500:$0.7190
      • 1000:$0.5670
      • 2500:$0.5030
      • 10000:$0.4840
      STGD8NC60KDT4STMicroelectronicsINSTOCK400
        STGD8NC60KDT4
        DISTI # C1S730200709589        		STMicroelectronicsTrans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R
        RoHS: Compliant        		2405
        • 250:$0.6283
        • 100:$0.7000
        • 25:$0.7981
        • 10:$0.8753
        STGD8NC60KDT4
        DISTI # 2889920        		STMicroelectronicsIGBT, SINGLE, 600V, 15A, TO-252
        RoHS: Compliant        		2400
        • 5:£0.5330
        • 25:£0.5220
        • 100:£0.5120
        STGD8NC60KDT4
        DISTI # 2889920        		STMicroelectronicsIGBT, SINGLE, 600V, 15A, TO-252
        RoHS: Compliant        		2380
        • 5:$2.2300
        • 25:$1.9100
        • 100:$1.4500
        • 250:$1.2200
        • 500:$1.0500
        • 1000:$1.0100
        • 5000:$0.9730
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        		 Voltage References 30ppm/C Drift 3.9uA Vltg Ref
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        OMO.#: OMO-ATF16V8C-7PU

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        Mfr.#: MCHC11F1CFNE4

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        OMO.#: OMO-IP4234CZ6-125-NEXPERIA

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        REF3318AIDBZT

        Mfr.#: REF3318AIDBZT

        OMO.#: OMO-REF3318AIDBZT-TEXAS-INSTRUMENTS

        		 Voltage References 30ppm/C Drift 3.9uA Vltg Ref
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        OMO.#: OMO-TMS320F28027FPTT-TEXAS-INSTRUMENTS

        		 Microcontrollers - MCU 32-bit Microcontrollers - MCU Piccolo MicroCntrll
        可用性
        库存:
        Available
        订购:
        1985
        输入数量:
        STGD8NC60KDT4的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$1.25
        US$1.25
        10
        US$1.06
        US$10.60
        100
        US$0.81
        US$81.30
        500
        US$0.72
        US$359.50
        1000
        US$0.57
        US$567.00
        由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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