STFV4N150

STFV4N150
Mfr. #:
STFV4N150
制造商:
STMicroelectronics
描述:
MOSFET IGBT
生命周期:
制造商新产品。
数据表:
STFV4N150 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STFV4N150 DatasheetSTFV4N150 Datasheet (P4-P6)STFV4N150 Datasheet (P7-P9)STFV4N150 Datasheet (P10-P12)STFV4N150 Datasheet (P13-P15)STFV4N150 Datasheet (P16)
ECAD Model:
更多信息:
STFV4N150 更多信息 STFV4N150 Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
TO-220-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
1.5 kV
Id - 连续漏极电流:
4 A
Rds On - 漏源电阻:
7 Ohms
Vgs - 栅源电压:
30 V
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
40 W
配置:
单身的
频道模式:
增强
打包:
管子
高度:
16.4 mm
长度:
10.4 mm
系列:
STFV4N150
晶体管类型:
1 N-Channel
宽度:
4.6 mm
品牌:
意法半导体
正向跨导 - 最小值:
3.5 S
秋季时间:
45 ns
产品类别:
MOSFET
上升时间:
30 ns
出厂包装数量:
1000
子类别:
MOSFET
典型关断延迟时间:
45 ns
典型的开启延迟时间:
35 ns
单位重量:
0.011640 oz
Tags
STFV, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TransMOSFETNCH15KV4A3Pin3TabTO220FHTube
***ark
Mosfet15Kv4ATo220Fh;TransistorPolaritynChannel;DrainSourceVoltageVds15Kv;ContinuousDrainCurrentId4A;OnResistanceRdsOn5Ohm;TransistorMountingthroughHole;RdsOnTestVoltageVgs10V;NoOfPins3PinsrohsCompliantYes
***nell
MOSFETN1500VTO220FH;TransistortypeMOSFET;VoltageVdstyp1500V;CurrentIdcont4A;ResistanceRdson7ohm;VoltageVgsRdsonmeasurement10V;VoltageVgsthtyp4V;CasestyleTO220FH;CurrentIar4A;CurrentIdmpulse12A;EnergyavalancherepetitiveEar350mJ;EnergyavalanchesinglepulseEas350mJ;PowerPd40W;TerminationTypeThroughHole;TransistorpolarityN;VoltageRdsmeasurement10V;VoltageVds1500V;VoltageVdsmax1500V;VoltageVgsmax30V;VoltageVgsthmax5V;VoltageVgsthmin3V
型号 制造商 描述 库存 价格
STFV4N150
DISTI # 497-5093-5-ND
STMicroelectronicsMOSFET N-CH 1500V 4A TO-220FH
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    STFV4N150
    DISTI # 37M6266
    STMicroelectronicsMOSFET, 1.5KV, 4A, TO-220FH,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.5kV,On Resistance Rds(on):5ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:40W RoHS Compliant: Yes0
      STFV4N150
      DISTI # 511-STFV4N150
      STMicroelectronicsMOSFET IGBT
      RoHS: Compliant
      0
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        OMO.#: OMO-STFV4N150

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        全新原装
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        OMO.#: OMO-STFV3N150-STMICROELECTRONICS

        MOSFET N-CH 1500V 2.5A TO-220FH
        可用性
        库存:
        Available
        订购:
        3000
        输入数量:
        STFV4N150的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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