IRF2807ZSTRLPBF

IRF2807ZSTRLPBF
Mfr. #:
IRF2807ZSTRLPBF
制造商:
Infineon Technologies
描述:
MOSFET MOSFT 75V 89A 9.4mOhm 71nC
生命周期:
制造商新产品。
数据表:
IRF2807ZSTRLPBF 数据表
交货:
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支付:
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HTML Datasheet:
IRF2807ZSTRLPBF DatasheetIRF2807ZSTRLPBF Datasheet (P4-P6)IRF2807ZSTRLPBF Datasheet (P7-P9)IRF2807ZSTRLPBF Datasheet (P10-P12)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-263-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
75 V
Id - 连续漏极电流:
89 A
Rds On - 漏源电阻:
9.4 mOhms
Vgs th - 栅源阈值电压:
4 V
Qg - 门电荷:
110 nC
最高工作温度:
+ 175 C
Pd - 功耗:
170 W
配置:
单身的
打包:
卷轴
高度:
4.4 mm
长度:
10 mm
晶体管类型:
1 N-Channel
宽度:
9.25 mm
品牌:
英飞凌科技
正向跨导 - 最小值:
67 S
秋季时间:
45 ns
产品类别:
MOSFET
上升时间:
79 ns
出厂包装数量:
800
子类别:
MOSFET
第 # 部分别名:
SP001564328
单位重量:
0.139332 oz
Tags
IRF2807ZST, IRF2807ZS, IRF2807Z, IRF2807, IRF28, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 75A;D2Pak;PD 170W;VGS +/-20
***ure Electronics
Single N-Channel 75V 9.4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 75V 89A 3-Pin(2+Tab) D2PAK T/R
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ure Electronics
Single N-Channel 75 V 9 mOhm 56 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***el Electronic
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 7.34 Milliohms; ID 80A; D2Pak; PD 140W; VGS +/-2
***ical
Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK Tube
***ark
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***(Formerly Allied Electronics)
AUIRFS3607 N-channel MOSFET Transistor; 80 A; 75 V; 3-Pin D2PAK
***ernational Rectifier
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ical
Trans MOSFET N-CH Si 75V 80A Automotive 3-Pin(2+Tab) D2PAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Mosfet, N Channel, 75V, 80A, D2Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.00734Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Exhaust; Injection
***nell
MOSFET, N-CH, 75V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.00734ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 140W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***icroelectronics
N-channel 55V - 0.0065Y - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
***et
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
***icroelectronics SCT
Power MOSFETs, 55V, 80A, D2PAK, Tape and Reel
***r Electronics
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; On State resistance @ Vgs = 10V: 8.5mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 320A; SMD Marking: 60N55F3; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
***emi
Power MOSFET 60V 75A 9.5 mOhm Single N-Channel D2PAK
***Yang
Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Rail - Rail/Tube
***th Star Micro
Designed for low voltage high speed switching applications in power supplies converters and power motor controls and bridge circuits.
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):9.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
IRF2807ZSTRLPBF
DISTI # V72:2272_13890755
Infineon Technologies AGTrans MOSFET N-CH Si 75V 89A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
308
  • 250:$0.8163
  • 100:$0.9561
  • 25:$1.1566
  • 10:$1.1613
  • 1:$1.3106
IRF2807ZSTRLPBF
DISTI # IRF2807ZSTRLPBFCT-ND
Infineon Technologies AGMOSFET N-CH 75V 75A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
802In Stock
  • 100:$1.5572
  • 10:$1.9110
  • 1:$2.1000
IRF2807ZSTRLPBF
DISTI # IRF2807ZSTRLPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 75V 75A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
802In Stock
  • 100:$1.5572
  • 10:$1.9110
  • 1:$2.1000
IRF2807ZSTRLPBF
DISTI # IRF2807ZSTRLPBFTR-ND
Infineon Technologies AGMOSFET N-CH 75V 75A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
800In Stock
  • 800:$1.0938
IRF2807ZSTRLPBF
DISTI # 26196322
Infineon Technologies AGTrans MOSFET N-CH Si 75V 89A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
308
  • 250:$0.8163
  • 100:$0.9561
  • 25:$1.1566
  • 12:$1.1613
IRF2807ZSTRLPBF
DISTI # IRF2807ZSTRLPBF
Infineon Technologies AGTrans MOSFET N-CH 75V 89A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF2807ZSTRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 19200
  • 800:$0.7979
  • 1600:$0.7699
  • 3200:$0.7429
  • 4800:$0.7149
  • 8000:$0.6939
IRF2807ZSTRLPBF
DISTI # IRF2807ZSTRLPBF
Infineon Technologies AGTrans MOSFET N-CH 75V 89A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF2807ZSTRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
    IRF2807ZSTRLPBF
    DISTI # SP001564328
    Infineon Technologies AGTrans MOSFET N-CH 75V 89A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564328)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 800:€0.7859
    • 1600:€0.6429
    • 3200:€0.5899
    • 4800:€0.5439
    • 8000:€0.5049
    IRF2807ZSTRLPBF
    DISTI # 43AC3285
    Infineon Technologies AGMOSFET, N-CH, 75V, 75A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power , RoHS Compliant: Yes729
    • 1:$1.7700
    • 10:$1.5200
    • 25:$1.4300
    • 50:$1.3400
    • 100:$1.2500
    • 250:$1.1800
    • 500:$1.1000
    IRF2807ZSTRLPBF.
    DISTI # 32AC0745
    Infineon Technologies AGTRENCH_MOSFETS , ROHS COMPLIANT: YES0
    • 1:$0.7980
    • 1600:$0.7700
    • 3200:$0.7430
    • 4800:$0.7150
    • 8000:$0.6940
    IRF2807ZSTRLPBF
    DISTI # 70017656
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 7.5 Milliohms,ID 75A,D2Pak,PD 170W,VGS +/-20
    RoHS: Compliant
    0
    • 10:$2.9300
    IRF2807ZSTRLPBF
    DISTI # 942-IRF2807ZSTRLPBF
    Infineon Technologies AGMOSFET MOSFT 75V 89A 9.4mOhm 71nC
    RoHS: Compliant
    1457
    • 1:$1.6700
    • 10:$1.4200
    • 100:$1.1400
    • 500:$0.9930
    • 800:$0.8230
    • 2400:$0.7660
    • 4800:$0.7380
    • 9600:$0.7100
    IRF2807ZSTRLPBF
    DISTI # 8312806P
    Infineon Technologies AGHEXFET N-CH MOSFET 89A 75V D2PAK, RL270
    • 100:£0.8250
    • 200:£0.7870
    • 400:£0.7490
    • 800:£0.5960
    IRF2807ZSTRLPBF
    DISTI # 8312806
    Infineon Technologies AGHEXFET N-CH MOSFET 89A 75V D2PAK, PK160
    • 10:£1.0920
    • 100:£0.8250
    • 200:£0.7870
    • 400:£0.7490
    • 800:£0.5960
    IRF2807ZSTRLPBF
    DISTI # 2803408
    Infineon Technologies AGMOSFET, N-CH, 75V, 75A, TO-263-3
    RoHS: Compliant
    729
    • 5:$2.6100
    • 25:$2.2700
    • 100:$1.8500
    • 250:$1.5700
    • 500:$1.3600
    • 1000:$1.2800
    • 5000:$1.2200
    IRF2807ZSTRLPBF
    DISTI # 2803408
    Infineon Technologies AGMOSFET, N-CH, 75V, 75A, TO-263-3
    RoHS: Compliant
    729
    • 5:£1.1000
    • 25:£1.0900
    • 100:£0.7950
    • 250:£0.7560
    • 500:£0.6020
    IRF2807ZSTRLPBF
    DISTI # C1S322000479704
    Infineon Technologies AGTrans MOSFET N-CH Si 75V 89A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    308
    • 250:$0.7939
    • 100:$0.9561
    • 25:$1.1566
    • 10:$1.1612
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    Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
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    Mfr.#: ESP-WROOM-02

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    SMD MODULE, ESP8266EX, 16MBITS S
    STM32F407G-DISC1

    Mfr.#: STM32F407G-DISC1

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    STM32F407VGT6 Microcontroller Development Kit 192KB RAM 1MB Flash Win 7/Win 8/Win XP OS
    B39162B9416K610

    Mfr.#: B39162B9416K610

    OMO.#: OMO-B39162B9416K610-434

    Signal Conditioning CSSP3 B9416
    AC0603FR-13100RL

    Mfr.#: AC0603FR-13100RL

    OMO.#: OMO-AC0603FR-13100RL-1190

    YAGAC0603FR-13100RL - Tape and Reel (Alt: AC0603FR-13100RL)
    F931C107MCCAJ6

    Mfr.#: F931C107MCCAJ6

    OMO.#: OMO-F931C107MCCAJ6-AVX

    Capacitor Tantalum Solid
    可用性
    库存:
    Available
    订购:
    1986
    输入数量:
    IRF2807ZSTRLPBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$1.67
    US$1.67
    10
    US$1.41
    US$14.10
    100
    US$1.13
    US$113.00
    500
    US$0.99
    US$496.50
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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