 |  | | |
| PartNumber | IRF200P222 | IRF200B211 | IRF200P223 |
| Description | MOSFET IFX OPTIMOS | MOSFET TRENCH_MOSFETS | MOSFET IFX OPTIMOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247AC-3 | TO-220-3 | TO-247AC-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 200 V |
| Id Continuous Drain Current | 182 A | 12 A | 100 A |
| Rds On Drain Source Resistance | 6.6 mOhms | 170 mOhms | 11.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 203 nC | 15.3 nC | 102 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | StrongIRFET | StrongIRFET | StrongIRFET |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 142 S | 13 S | 93 S |
| Fall Time | 97 ns | 6.5 ns | 62 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 96 ns | 9.5 ns | 66 ns |
| Factory Pack Quantity | 400 | 1000 | 400 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 77 ns | 11.3 ns | 55 ns |
| Typical Turn On Delay Time | 25 ns | 6.5 ns | 16 ns |
| Part # Aliases | SP001582092 | SP001561622 | SP001582440 |
| Unit Weight | 0.211644 oz | 0.081130 oz | 0.211644 oz |
| Pd Power Dissipation | - | 80 W | 313 W |
| Height | - | 15.65 mm | - |
| Length | - | 10 mm | - |
| Width | - | 4.4 mm | - |
| Moisture Sensitive | - | - | Yes |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF200P222 | MOSFET IFX OPTIMOS | |
| IRF200B211 | MOSFET TRENCH_MOSFETS | ||
| IRF200S234 | MOSFET TRENCH_MOSFETS | ||
| IRF2204SPBF | MOSFET MOSFT 40V 170A 3.6mOhm 130nC | ||
| IRF200P222 | MOSFET N-CH 200V 182A TO247AC | ||
| IRF200P223 | MOSFET N-CH 200V 100A TO247AC | ||
| IRF200S234 | TRENCH_MOSFETS | ||
| IRF200B211 | MOSFET N-CH 200V 12A TO-220AB | ||
| IRF2204PBF | MOSFET N-CH 40V 210A TO-220AB | ||
| IRF2204SPBF | MOSFET N-CH 40V 170A D2PAK | ||
| IRF2204LPBF | IGBT Transistors MOSFET MOSFT 40V 170A 3.6mOhm 130nC | ||
Infineon / IR |
IRF2204PBF | MOSFET MOSFT 40V 210A 3.6mOhm 130nC | |
Infineon Technologies |
IRF200P223 | MOSFET IFX OPTIMOS | |
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