IXFN34N80

Mfr. #:: IXFN34N80
制造商:: Littelfuse
描述:: MOSFET 34 Amps 800V 0.24 Rds
生命周期:: 制造商新产品。
数据表:: IXFN34N80 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: IXYS

产品分类: 模块

系列: IXFN34N80

打包: 管子

单位重量: 1.340411 oz

安装方式: 贴片/贴片

商品名: 超场效应晶体管

包装盒: SOT-227-4

技术: 硅

通道数: 1 Channel

配置: 单双源

晶体管型: 1 N-Channel

钯功耗: 600 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 40 ns

上升时间: 45 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 34 A

Vds-漏-源-击穿电压: 800 V

Rds-On-Drain-Source-Resistance: 240 mOhms

晶体管极性: N通道

典型关断延迟时间: 100 ns

典型开启延迟时间: 45 ns

通道模式: 增强

Tags: IXFN34, IXFN3, IXFN, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFN34N80 描述

***i-Key: MOSFET N-CH 800V 34A SOT-227B

***ark: MOSFET, N, SOT-227B; Transistor type:MOSFET; Current, Id cont:34A; Resistance, Rds on:0.24R; Case style:SOT-227B (ISOTOP); Current, Idm pulse:136A; Energy, avalanche repetitive Ear:64mJ; Energy, avalanche single pulse Eas:3J; Power RoHS Compliant: Yes

***nell: MOSFET, N, SOT-227B; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:34A; Resistance, Rds On:0.24ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOTOP; Termination Type:Screw; Avalanche Single Pulse Energy Eas:3J; Current, Idm Pulse:136A; Max Repetitive Avalanche Energy:64mJ; Power Dissipation:600W; Power, Pd:600W; Resistance, Rds on Max:0.24ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Isolation:2500V; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Weight:0.000036kg

Market price

型号	制造商	描述	库存	价格
IXFN34N80 DISTI # IXFN34N80-ND	IXYS Corporation	MOSFET N-CH 800V 34A SOT-227B RoHS: Compliant Min Qty: 10 Container: Tube	Temporarily Out of Stock	10:$30.7470
IXFN34N80 DISTI # 747-IXFN34N80	IXYS Corporation	MOSFET 34 Amps 800V 0.24 Rds RoHS: Compliant	0	10:$30.7500 30:$28.2600 50:$27.0500 100:$26.2600 200:$24.1000

相关产品

图片	型号	描述
	Mfr.#: IXFN70N100X OMO.#: OMO-IXFN70N100X	MOSFET 1000V 65A SOT-227 Power MOSFET
	Mfr.#: IXFN170N30P OMO.#: OMO-IXFN170N30P	MOSFET 138 Amps 300V 0.018 Rds
	Mfr.#: IXFN70N120SK OMO.#: OMO-IXFN70N120SK	MOSFET SiC Power MOSFET
	Mfr.#: IXFN44N60 OMO.#: OMO-IXFN44N60	MOSFET 44 Amps 600V
	Mfr.#: IXFN230N10 OMO.#: OMO-IXFN230N10	MOSFET 230 Amps 100V 0.006 Rds
	Mfr.#: IXFN110N60P3 OMO.#: OMO-IXFN110N60P3-IXYS-CORPORATION	MOSFET N-CH 600V 90A SOT227
	Mfr.#: IXFN160N30T OMO.#: OMO-IXFN160N30T-IXYS-CORPORATION	MOSFET N-CH 300V 130A SOT227
	Mfr.#: IXFN21N100Q OMO.#: OMO-IXFN21N100Q-IXYS-CORPORATION	MOSFET 21 Amps 1000V 0.5 Rds
	Mfr.#: IXFN36N100 OMO.#: OMO-IXFN36N100-IXYS-CORPORATION	IGBT Transistors MOSFET 1KV 36A
	Mfr.#: IXFN102N30P OMO.#: OMO-IXFN102N30P-IXYS-CORPORATION	IGBT Transistors MOSFET 102 Amps 300V 0.033 Rds