SI4952DY-T1-E3

SI4952DY-T1-E3
Mfr. #:
SI4952DY-T1-E3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
生命周期:
制造商新产品。
数据表:
SI4952DY-T1-E3 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
威世硅
产品分类
FET - 阵列
系列
沟槽FETR
打包
卷带 (TR)
部分别名
SI4952DY-E3
单位重量
0.006596 oz
安装方式
贴片/贴片
包装盒
8-SOIC (0.154", 3.90mm Width)
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
2 Channel
供应商-设备-包
8-SO
配置
双重的
FET型
2 N-Channel (Dual)
最大功率
2.8W
晶体管型
2 N-Channel
漏源电压 Vdss
25V
输入电容-Ciss-Vds
680pF @ 13V
FET-Feature
逻辑电平门
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
23 mOhm @ 7A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
栅极电荷-Qg-Vgs
18nC @ 10V
钯功耗
1.8 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
50 ns
上升时间
50 ns
VGS-栅极-源极-电压
16 V
Id 连续漏极电流
7 A
Vds-漏-源-击穿电压
25 V
Rds-On-Drain-Source-Resistance
23 mOhms
晶体管极性
N通道
典型关断延迟时间
20 ns
典型开启延迟时间
15 ns
通道模式
增强
Tags
SI4952DY-T, SI4952D, SI4952, SI495, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 25V 8A 8-SOIC
型号 制造商 描述 库存 价格
SI4952DY-T1-E3
DISTI # SI4952DY-T1-E3-ND
Vishay SiliconixMOSFET 2N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4952DY-T1-E3
    DISTI # 781-SI4952DY-E3
    Vishay IntertechnologiesMOSFET 25V 8.0A 2.8W
    RoHS: Compliant
    0
      SI4952DY-T1-E3Vishay Siliconix 1226
        图片 型号 描述
        SI4952DY-T1-GE3

        Mfr.#: SI4952DY-T1-GE3

        OMO.#: OMO-SI4952DY-T1-GE3

        MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
        SI4952DY-T1-E3

        Mfr.#: SI4952DY-T1-E3

        OMO.#: OMO-SI4952DY-T1-E3

        MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
        SI4952DY-T1-E3

        Mfr.#: SI4952DY-T1-E3

        OMO.#: OMO-SI4952DY-T1-E3-VISHAY

        RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
        SI4952DY-T1-GE3

        Mfr.#: SI4952DY-T1-GE3

        OMO.#: OMO-SI4952DY-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
        SI4952DY

        Mfr.#: SI4952DY

        OMO.#: OMO-SI4952DY-1190

        全新原装
        SI4952DY-T1

        Mfr.#: SI4952DY-T1

        OMO.#: OMO-SI4952DY-T1-1190

        全新原装
        可用性
        库存:
        Available
        订购:
        4000
        输入数量:
        SI4952DY-T1-E3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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        500
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