SI4952DY-T1-GE3

SI4952DY-T1-GE3
Mfr. #:
SI4952DY-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
生命周期:
制造商新产品。
数据表:
SI4952DY-T1-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SI4952DY-T1-GE3 DatasheetSI4952DY-T1-GE3 Datasheet (P4-P6)SI4952DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
商品名:
沟槽场效应晶体管
打包:
卷轴
系列:
SI4
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
2500
子类别:
MOSFET
第 # 部分别名:
SI4952DY-GE3
单位重量:
0.006596 oz
Tags
SI4952DY-T, SI4952D, SI4952, SI495, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 25V 7A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 25V 8A 8-SOIC
***ark
Transistor; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.2V; Power Dissipation, Pd:1.8W ;RoHS Compliant: Yes
型号 制造商 描述 库存 价格
SI4952DY-T1-GE3
DISTI # SI4952DY-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 25V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4952DY-T1-GE3
    DISTI # 781-SI4952DY-T1-GE3
    Vishay IntertechnologiesMOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
    RoHS: Compliant
    0
      图片 型号 描述
      SI4952DY-T1-GE3

      Mfr.#: SI4952DY-T1-GE3

      OMO.#: OMO-SI4952DY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4952DY-T1-E3

      Mfr.#: SI4952DY-T1-E3

      OMO.#: OMO-SI4952DY-T1-E3

      MOSFET RECOMMENDED ALT 781-SI4214DDY-GE3
      SI4952DY-T1-E3

      Mfr.#: SI4952DY-T1-E3

      OMO.#: OMO-SI4952DY-T1-E3-VISHAY

      RF Bipolar Transistors MOSFET 25V 8.0A 2.8W
      SI4952DY-T1-GE3

      Mfr.#: SI4952DY-T1-GE3

      OMO.#: OMO-SI4952DY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET Dual N-Ch MOSFET 25V 23mohm @ 10V
      SI4952DY

      Mfr.#: SI4952DY

      OMO.#: OMO-SI4952DY-1190

      全新原装
      SI4952DY-T1

      Mfr.#: SI4952DY-T1

      OMO.#: OMO-SI4952DY-T1-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      3000
      输入数量:
      SI4952DY-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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