SIS780DN-T1-GE3

Mfr. #:: SIS780DN-T1-GE3
制造商:: Vishay
描述:: MOSFET N-CH 30V 18A POWERPAK1212
生命周期:: 制造商新产品。
数据表:: SIS780DN-T1-GE3 数据表
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更多信息:: SIS780DN-T1-GE3 更多信息

产品属性
属性值

制造商: 威世

产品分类: 集成电路芯片

系列: SISxxxDN

打包: 卷轴

部分别名: SIS780DN-GE3

安装方式: 贴片/贴片

包装盒: PowerPAK-1212-8

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 27.7 W

秋季时间: 9 ns

上升时间: 11 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 18 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 11 mOhms

晶体管极性: N通道

典型关断延迟时间: 14 ns

典型开启延迟时间: 7 ns

Qg-门电荷: 16.3 nC

正向跨导最小值: 25 S

Tags: SIS780, SIS78, SIS7, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS780DN-T1-GE3 更多信息

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型号	制造商	描述	库存	价格
SIS780DN-T1-GE3 DISTI # SIS780DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 18A POWERPAK1212 RoHS: Not compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.2532
SIS780DN-T1-GE3 DISTI # SIS780DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 18A POWERPAK1212 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	3000In Stock	1000:$0.2692 500:$0.3365 100:$0.4543 10:$0.5890 1:$0.6700
SIS780DN-T1-GE3 DISTI # SIS780DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 18A POWERPAK1212 RoHS: Not compliant Min Qty: 1 Container: Digi-Reel®	3000In Stock	1000:$0.2692 500:$0.3365 100:$0.4543 10:$0.5890 1:$0.6700
SIS780DN-T1-GE3 DISTI # SIS780DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS780DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.2159 6000:$0.2089 12000:$0.2009 18000:$0.1949 30000:$0.1899
SIS780DN-T1-GE3 DISTI # 78-SIS780DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	1955	1:$0.7100 10:$0.5370 100:$0.3990 500:$0.3270 1000:$0.2530 3000:$0.2310

图片	型号	描述
	Mfr.#: SIS780DN-T1-GE3 OMO.#: OMO-SIS780DN-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
	Mfr.#: SIS780DN OMO.#: OMO-SIS780DN-1190	全新原装
	Mfr.#: SIS780DN-T1-GE OMO.#: OMO-SIS780DN-T1-GE-1190	全新原装
	Mfr.#: SIS780DN-T1-GE3 OMO.#: OMO-SIS780DN-T1-GE3-VISHAY	MOSFET N-CH 30V 18A POWERPAK1212

SIS780DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes