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| PartNumber | SIS780DN-T1-GE3 | SIS776DN-T1-GE3 | SIS778DN-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 | MOSFET | RF Bipolar Transistors MOSFET 30 Volts 35 Amps 52 Watts |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-1212-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 18 A | - | - |
| Rds On Drain Source Resistance | 13.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 24.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 27.7 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, SkyFET, PowerPAK | - |
| Packaging | Reel | - | - |
| Series | SIS | SIS | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 10 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SIS780DN-GE3 | - | - |
