SIE830DF-T1-GE3

SIE830DF-T1-GE3
Mfr. #:
SIE830DF-T1-GE3
制造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 120A 104W 4.2mohm @ 10V
生命周期:
制造商新产品。
数据表:
SIE830DF-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
产品属性
属性值
制造商
威世 / Siliconix
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
部分别名
SIE830DF-GE3
安装方式
贴片/贴片
包装盒
PolarPAK-10
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
5.2 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
12 V
Id 连续漏极电流
27 A
Vds-漏-源-击穿电压
30 V
Rds-On-Drain-Source-Resistance
4.2 mOhms
晶体管极性
N通道
Tags
SIE83, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
型号 制造商 描述 库存 价格
SIE830DF-T1-GE3
DISTI # SIE830DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 50A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIE830DF-T1-GE3
    DISTI # 781-SIE830DF-GE3
    Vishay IntertechnologiesMOSFET 30V 120A 104W 4.2mohm @ 10V
    RoHS: Compliant
    0
      图片 型号 描述
      SIE830DF-T1-E3

      Mfr.#: SIE830DF-T1-E3

      OMO.#: OMO-SIE830DF-T1-E3-VISHAY

      RF Bipolar Transistors MOSFET 30V 50A 104W
      SIE830DF-T1-GE3

      Mfr.#: SIE830DF-T1-GE3

      OMO.#: OMO-SIE830DF-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 30V 120A 104W 4.2mohm @ 10V
      可用性
      库存:
      Available
      订购:
      2500
      输入数量:
      SIE830DF-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.00
      US$0.00
      10
      US$0.00
      US$0.00
      100
      US$0.00
      US$0.00
      500
      US$0.00
      US$0.00
      1000
      US$0.00
      US$0.00
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