IPW90R800C3

Mfr. #:: IPW90R800C3
制造商:: Rochester Electronics, LLC
描述:: Darlington Transistors MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3
生命周期:: 制造商新产品。
数据表:: IPW90R800C3 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: FET - 单

系列: CoolMOS C3

打包: 管子

部分别名: IPW90R800C3FKSA1 IPW90R800C3XK SP000413758

单位重量: 1.340411 oz

安装方式: 通孔

商品名: 酷摩

包装盒: TO-247-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 104 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 32 ns

上升时间: 20 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 6.9 A

Vds-漏-源-击穿电压: 900 V

Rds-On-Drain-Source-Resistance: 800 mOhms

晶体管极性: N通道

典型关断延迟时间: 400 ns

典型开启延迟时间: 70 ns

通道模式: 增强

Tags: IPW90R, IPW9, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
IPW90R800C3FKSA1 DISTI # V99:2348_06377275	Infineon Technologies AG	Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	130	10:$2.0700 1:$2.3490
IPW90R800C3FKSA1 DISTI # IPW90R800C3FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 900V 6.9A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	10In Stock	10:$3.0750 1:$3.3900
IPW90R800C3FKSA1 DISTI # 26197212	Infineon Technologies AG	Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	130	10:$2.0700 5:$2.3490
IPW90R800C3 DISTI # 726-IPW90R800C3	Infineon Technologies AG	MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3 RoHS: Compliant	24	1:$2.7700 10:$2.3600 100:$1.8900
IPW90R800C3FKSA1 DISTI # 726-IPW90R800C3FKSA1	Infineon Technologies AG	MOSFET N-Ch 900V 6.9A TO247-3 CoolMOS C3 RoHS: Compliant	120	1:$2.7700 10:$2.3600 100:$1.8900 500:$1.6500 1000:$1.3700 2500:$1.2700 5000:$1.2300
IPW90R800C3	Infineon Technologies AG	Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	17668	1000:$1.2400 500:$1.3000 100:$1.3500 25:$1.4100 1:$1.5200
IPW90R800C3FKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD RoHS: Compliant	40	1000:$1.5200 500:$1.5900 100:$1.6600 25:$1.7300 1:$1.8600
IPW90R800C3	Infineon Technologies AG	INSTOCK	247
IPW90R800C3	Infineon Technologies AG	900V,800m,6.9A,N-Channel Power MOSFET	240	1:$1.9400 100:$1.6200 500:$1.4300 1000:$1.3900
IPW90R800C3FKSA1 DISTI # 1664092	Infineon Technologies AG	MOSFET, N, TO-247 RoHS: Compliant	0	1:£2.7400 10:£2.1900 100:£1.9900 250:£1.8500 500:£1.6500
IPW90R800C3FKSA1 DISTI # C1S322000676006	Infineon Technologies AG	MOSFETs RoHS: Compliant	130	10:$2.0710 1:$2.3490

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