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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| FQI7N80TU DISTI # V36:1790_06359039 | ON Semiconductor | 800V N-CHANNEL QFET | 0 |
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| FQI7N80TU DISTI # FQI7N80TU-ND | ON Semiconductor | MOSFET N-CH 800V 6.6A I2PAK RoHS: Compliant Min Qty: 1000 Container: Tube | Temporarily Out of Stock |
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| FQI7N80TU DISTI # FQI7N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Bulk (Alt: FQI7N80TU) RoHS: Compliant Min Qty: 264 Container: Bulk | Americas - 0 |
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| FQI7N80TU DISTI # FQI7N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R (Alt: FQI7N80TU) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
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| FQI7N80TU DISTI # FQI7N80TU | ON Semiconductor | Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: FQI7N80TU) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 0 |
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| FQI7N80TU DISTI # 82C4196 | ON Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6.6A I(D),TO-262AA ROHS COMPLIANT: YES | 0 |
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| FQI7N80TU DISTI # 512-FQI7N80TU | ON Semiconductor | MOSFET 800V N-Channel QFET RoHS: Compliant | 0 |
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| FQI7N80TU | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 6588 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: FQI8N60CTU OMO.#: OMO-FQI8N60CTU |
MOSFET 600V N-Channel Adv Q-FET C-Series |
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Mfr.#: FQI10N20 OMO.#: OMO-FQI10N20-1190 |
全新原装 |
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Mfr.#: FQI12N60C OMO.#: OMO-FQI12N60C-1190 |
全新原装 |
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Mfr.#: FQI13N06TU |
MOSFET N-CH 60V 13A I2PAK |
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Mfr.#: FQI17P10TU OMO.#: OMO-FQI17P10TU-1190 |
Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: FQI27P06 OMO.#: OMO-FQI27P06-1190 |
全新原装 |
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Mfr.#: FQI3N80 OMO.#: OMO-FQI3N80-1190 |
全新原装 |
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Mfr.#: FQI3P20TUFSC OMO.#: OMO-FQI3P20TUFSC-1190 |
全新原装 |
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Mfr.#: FQI40N10 OMO.#: OMO-FQI40N10-1190 |
全新原装 |
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Mfr.#: FQI7P06 OMO.#: OMO-FQI7P06-1190 |
全新原装 |