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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| A2G22S251-01SR3 DISTI # A2G22S251-01SR3-ND | NXP Semiconductors | AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 250 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| A2G22S251-01SR3 DISTI # A2G22S251-01SR3 | Avnet, Inc. | RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz - Tape and Reel (Alt: A2G22S251-01SR3) RoHS: Compliant Min Qty: 250 Container: Reel | Americas - 0 |
|
| A2G22S251-01SR3 DISTI # A2G22S251-01SR3 | Avnet, Inc. | RF Power GaN Transistor 1800-2200MHz 48V 51dBm 125W 32W AVG W-CDMA 19.6dB@2110MHz (Alt: A2G22S251-01SR3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| A2G22S251-01SR3 DISTI # 841-A2G22S25A3A5641 | NXP Semiconductors | RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2/T3 *STANDARD MAR RoHS: Compliant | 0 |
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| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: A2G22S251-01SR3 OMO.#: OMO-A2G22S251-01SR3 |
RF Amplifier A2G22S251-01S/CFM2F///REEL 13 Q2 DP |
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Mfr.#: A2G22S160-01SR3 OMO.#: OMO-A2G22S160-01SR3 |
RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V |
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Mfr.#: A2G26H280-04SR3 OMO.#: OMO-A2G26H280-04SR3 |
RF JFET Transistors Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V |
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Mfr.#: A2G22S190-01SR3 OMO.#: OMO-A2G22S190-01SR3 |
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V |
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Mfr.#: A2G22S160-01SR3 |
IC TRANS RF LDMOS |
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Mfr.#: A2G26H280-04SR3 |
AIRFAST RF POWER GAN TRANSISTOR |
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Mfr.#: A2G22S160 OMO.#: OMO-A2G22S160-1190 |
全新原装 |
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Mfr.#: A2G26H281-04S OMO.#: OMO-A2G26H281-04S-1190 |
全新原装 |
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Mfr.#: A2G26H281-04SR3 |
AIRFAST RF POWER GAN TRANSISTOR |
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Mfr.#: A2G26S160-01SR3 OMO.#: OMO-A2G26S160-01SR3-1190 |
全新原装 |