SI3493BDV-T1-E3

Mfr. #:: SI3493BDV-T1-E3
制造商:: Vishay
描述:: MOSFET P-CH 20V 8A 6-TSOP
生命周期:: 制造商新产品。
数据表:: SI3493BDV-T1-E3 数据表
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HTML Datasheet:: SI3493BDV-T1-E3 Datasheet SI3493BDV-T1-E3 Datasheet (P4-P6)SI3493BDV-T1-E3 Datasheet (P7-P9)SI3493BDV-T1-E3 Datasheet (P10-P11)
ECAD Model:

产品属性
属性值

制造商: 威世

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI3493BDV-E3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 6-TSOP

配置: 单身的

FET型: MOSFET P 沟道，金属氧化物

最大功率: 2.97W

晶体管型: 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 1805pF @ 10V

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 8A (Tc)

Rds-On-Max-Id-Vgs: 27.5 mOhm @ 7A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

栅极电荷-Qg-Vgs: 43.5nC @ 5V

钯功耗: 2.08 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 84 ns

上升时间: 72 ns

VGS-栅极-源极-电压: 8 V

Id 连续漏极电流: 7 A

Vds-漏-源-击穿电压: - 20 V

Rds-On-Drain-Source-Resistance: 27.5 mOhms

晶体管极性: P-通道

典型关断延迟时间: 75 ns

典型开启延迟时间: 22 ns

通道模式: 增强

Tags: SI3493BDV-T1-E, SI3493BDV-T, SI3493B, SI3493, SI349, SI34, SI3

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3493BDV-T1-E3 描述

***et: Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R

***ure Electronics: P-CH MOSFET TSOP-6 20V 27MOHM @ 4.5V

***ment14 APAC: MOSFET, P CH, -20V, -8A, TSOP-6

***ronik: P-CHANNEL-FET 7A 20V TSOP-6 RoHSconf

***nell: MOSFET, P CH, -20V, 0.0347OHM, -8A, TSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0347ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:2.97W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-

Market price

型号	制造商	描述	库存	价格
SI3493BDV-T1-E3 DISTI # V72:2272_09216698	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R RoHS: Compliant	2384	1000:$0.3610 500:$0.4386 250:$0.4767 100:$0.5296 25:$0.6753 10:$0.6767 1:$0.7929
SI3493BDV-T1-E3 DISTI # V36:1790_09216698	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R RoHS: Compliant	0
SI3493BDV-T1-E3 DISTI # SI3493BDV-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15187In Stock	1000:$0.3682 500:$0.4553 100:$0.6078 10:$0.7820 1:$0.8900
SI3493BDV-T1-E3 DISTI # SI3493BDV-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15187In Stock	1000:$0.3682 500:$0.4553 100:$0.6078 10:$0.7820 1:$0.8900
SI3493BDV-T1-E3 DISTI # SI3493BDV-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.3258
SI3493BDV-T1-E3 DISTI # 31329303	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R RoHS: Compliant	2384	1000:$0.3881 500:$0.4715 250:$0.5125 100:$0.5693 25:$0.7259 19:$0.7275
SI3493BDV-T1-E3 DISTI # SI3493BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R (Alt: SI3493BDV-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 6000	3000:€0.3779 6000:€0.2579 12000:€0.2219 18000:€0.2049 30000:€0.1899
SI3493BDV-T1-E3 DISTI # SI3493BDV-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3493BDV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3639 6000:$0.3531 12000:$0.3387 18000:$0.3294 30000:$0.3205
SI3493BDV-T1-E3 DISTI # 69W7191	Vishay Intertechnologies	Trans MOSFET P-CH 20V 7A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 69W7191) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.1600 25:$0.9260 50:$0.8150 100:$0.7030 250:$0.6430 500:$0.5810 1000:$0.4850
SI3493BDV-T1-E3 DISTI # 75M5453	Vishay Intertechnologies	P CHANNEL MOSFET, -20V, 8A, TSOP, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-900mV RoHS Compliant: Yes	0	1:$0.4650 3000:$0.4650
SI3493BDV-T1-E3 DISTI # 69W7191	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -8A, TSOP-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0347ohm,Rds(on) Test Voltage Vgs:-1.8V,Threshold Voltage Vgs:-400mV RoHS Compliant: Yes	130	500:$0.5810 250:$0.6430 100:$0.7030 50:$0.8150 25:$0.9260 1:$1.1500
SI3493BDV-T1-E3. DISTI # 30AC0149	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET ROHS COMPLIANT: NO	0	1:$0.4650 3000:$0.4650
SI3493BDV-T1-E3 DISTI # 781-SI3493BDV-T1-E3	Vishay Intertechnologies	MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V RoHS: Compliant	5960	1:$0.9200 10:$0.7410 100:$0.5620 500:$0.4650
SI3493BDV-T1-E3	Vishay Siliconix		35	9:$0.5625
SI3493BDV-T1-E3	Vishay Siliconix	8 A, 20 V, 0.0275 ohm, P-CHANNEL, Si, POWER, MOSFET	356	201:$0.2100 45:$0.3000 1:$0.6000
SI3493BDV-T1-E3	Vishay Semiconductors	8 A, 20 V, 0.0275 ohm, P-CHANNEL, Si, POWER, MOSFET	28	8:$0.6000 1:$0.7500
SI3493BDV-T1-E3	Vishay Intertechnologies	INSTOCK	166
SI3493BDV-T1-E3	Vishay Intertechnologies	INSTOCK	165
SI3493BDV-T1-E3	Vishay Intertechnologies	MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V RoHS: Compliant	Americas -
SI3493BDV-T1-E3 DISTI # 2335297	Vishay Intertechnologies	MOSFET, P CH, -20V, 0.0347OHM, -8A, TSOP RoHS: Compliant	130	1000:$0.5180 500:$0.6470 100:$0.8740 10:$1.1400 1:$1.2900
SI3493BDV-T1-E3 DISTI # 2459411	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -8A, TSOP-6 RoHS: Compliant	130	1000:$0.5180 500:$0.6470 100:$0.8740 10:$1.1400 1:$1.2900
SI3493BDV-T1-E3 DISTI # 2459411	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -8A, TSOP-6 RoHS: Compliant	130	250:£0.5440 100:£0.5950 50:£0.6890 25:£0.7830 1:£0.9770
SI3493BDV-T1-E3 DISTI # XSKDRABV0041537	Vishay Intertechnologies	RoHS: Compliant	9000 in Stock0 on Order	9000:$0.2573 3000:$0.2757

图片	型号	描述
	Mfr.#: SI3493BDV-T1-GE3 OMO.#: OMO-SI3493BDV-T1-GE3	MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V
	Mfr.#: SI3493BDV OMO.#: OMO-SI3493BDV-1190	全新原装
	Mfr.#: SI3493BDV-T1 OMO.#: OMO-SI3493BDV-T1-1190	全新原装
	Mfr.#: SI3493BDV-T1-E3 OMO.#: OMO-SI3493BDV-T1-E3-VISHAY	MOSFET P-CH 20V 8A 6-TSOP
	Mfr.#: SI3493BDV-T1-E3-S OMO.#: OMO-SI3493BDV-T1-E3-S-1190	全新原装
	Mfr.#: SI3493BDV-T1-GE3 OMO.#: OMO-SI3493BDV-T1-GE3-VISHAY	MOSFET P-CH 20V 8A 6-TSOP
	Mfr.#: SI3493BDV-T1-GE3-S OMO.#: OMO-SI3493BDV-T1-GE3-S-1190	全新原装
	Mfr.#: SI3493BDV-T1-E3-CUT TAPE OMO.#: OMO-SI3493BDV-T1-E3-CUT-TAPE-1190	全新原装

SI3493BDV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes