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| PartNumber | SI3493DDV-T1-GE3 | SI3493BDV-T1-GE3 | SI3493DV-T1-E3 |
| Description | MOSFET -20V Vds 8V Vgs TSOP-6 | MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V | MOSFET RECOMMENDED ALT 781-SI3493BDV-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOP-6 | TSOP-6 | TSOP-6 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 52.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 115 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Tradename | - | TrenchFET | TrenchFET |
| Series | - | SI3 | SI3 |
| Part # Aliases | - | SI3493BDV-GE3 | SI3493DV-E3 |
| Unit Weight | - | 0.000705 oz | 0.000705 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI3493DDV-T1-GE3 | MOSFET -20V Vds 8V Vgs TSOP-6 | |
| SI3493BDV-T1-GE3 | MOSFET 20V 8.0A 2.97W 27.5mohm @ 4.5V | ||
| SI3499DV-T1-GE3 | MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V | ||
| SI3495DV-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI3493BDV-GE3 | ||
| SI3499DV-T1-E3 | MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V | ||
| SI3495DV-T1-E3 | MOSFET RECOMMENDED ALT 781-SI3493BDV-GE3 | ||
| SI3493DV-T1-GE3 | MOSFET P-Ch MOSFET TSOP-6 20V 27mohm @ 4.5V | ||
| SI3493DV-T1-E3 | MOSFET RECOMMENDED ALT 781-SI3493BDV-GE3 | ||
Vishay |
SI3493DV-T1-E3 | IGBT Transistors MOSFET 20V 7.0A 2.0W 27mohm @ 4.5V | |
| SI3493BDV-T1-E3 | MOSFET P-CH 20V 8A 6-TSOP | ||
| SI3493BDV-T1-GE3 | MOSFET P-CH 20V 8A 6-TSOP | ||
| SI3493DDV-T1-GE3 | MOSFET P-CHANNEL 20V 8A 6TSOP | ||
| SI3495DV-T1-E3 | MOSFET P-CH 20V 5.3A 6-TSOP | ||
| SI3499DV-T1-GE3 | MOSFET P-CH 8V 5.3A 6-TSOP | ||
| SI3493DV-T1-GE3 | MOSFET P-CH 20V 5.3A 6-TSOP | ||
| SI3495DV-T1-GE3 | MOSFET P-CH 20V 5.3A 6-TSOP | ||
| SI3499DV-T1-E3 | MOSFET P-CH 8V 5.3A 6-TSOP | ||
| SI3493BDV | 全新原装 | ||
| SI3493BDV-T1 | 全新原装 | ||
| SI3493BDV-T1-E3-S | 全新原装 | ||
| SI3493BDV-T1-GE3-S | 全新原装 | ||
| SI3493DV | 全新原装 | ||
| SI3493DV-E3 | 全新原装 | ||
| SI3493DV-T1 | MOSFET RECOMMENDED ALT 781-SI3493BDV-T1-E3 | ||
| SI3494BDV-T1-GE3 | 全新原装 | ||
| SI3495DVTIE3 | 全新原装 | ||
| SI3493BDV-T1-E3-CUT TAPE | 全新原装 | ||
| SI3493DV-T1-E3. | 全新原装 |