FDMS8050ET30

Mfr. #:: FDMS8050ET30
制造商:: ON Semiconductor
描述:: MOSFET N-CH 30V 55A 8-PQFN
生命周期:: 制造商新产品。
数据表:: FDMS8050ET30 数据表
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更多信息:: FDMS8050ET30 更多信息

产品属性
属性值

制造商: 仙童半导体

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

单位重量: 0.008818 oz

安装方式: 贴片/贴片

包装盒: Power-56-8

技术: 硅

通道数: 1 Channel

配置: 单身的

钯功耗: 180 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 16 ns

上升时间: 22 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 423 A

Vds-漏-源-击穿电压: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 650 uOhms

晶体管极性: N通道

典型关断延迟时间: 87 ns

典型开启延迟时间: 29 ns

Qg-门电荷: 204 nC

正向跨导最小值: 333 S

通道模式: 增强

Tags: FDMS80, FDMS8, FDMS, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMS8050ET30 描述

***Semiconductor: N-Channel PowerTrench® MOSFET 30V, 423A, 0.65mΩ

***et Europe: Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R

***ical: Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R

***ure Electronics: MOSFET N-CH 30V 55A 8-PQFN

***i-Key: MOSFET N-CH 30V 8-PQFN

***et: PT8 N 30/20 IN POWERCLIP 56 SINGLE

***ark: TAPE REEL / PT8 N 30/20 P 56 S

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:423A; Drain Source Voltage Vds:30V; On Resistance Rds(on):500µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:180W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: MOSFET, CA-N, 30V, 423A, POWER 56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:423A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):500µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:180W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

FDMS8050ET30 更多信息

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

型号	制造商	描述	库存	价格
FDMS8050ET30 DISTI # V72:2272_06338143	ON Semiconductor	Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R	185	100:$1.5710 25:$1.7120 10:$1.9020 1:$2.3243
FDMS8050ET30 DISTI # V36:1790_06338143	ON Semiconductor	Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R	0	3000000:$1.3710 1500000:$1.3730 300000:$1.4700 30000:$1.6200 3000:$1.6440
FDMS8050ET30 DISTI # FDMS8050ET30CT-ND	ON Semiconductor	MOSFET N-CH 30V 55A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1414In Stock	1000:$1.7824 500:$2.1134 100:$2.4826 10:$3.0300 1:$3.3700
FDMS8050ET30 DISTI # FDMS8050ET30DKR-ND	ON Semiconductor	MOSFET N-CH 30V 55A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1414In Stock	1000:$1.7824 500:$2.1134 100:$2.4826 10:$3.0300 1:$3.3700
FDMS8050ET30 DISTI # FDMS8050ET30TR-ND	ON Semiconductor	MOSFET N-CH 30V 55A 8-PQFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	6000:$1.5822 3000:$1.6440
FDMS8050ET30 DISTI # 25921914	ON Semiconductor	Trans MOSFET N-CH 30V 55A 8-Pin Power 56 EP T/R	185	5:$2.3243
FDMS8050ET30 DISTI # FDMS8050ET30	ON Semiconductor	Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R - Bulk (Alt: FDMS8050ET30) Min Qty: 191 Container: Bulk	Americas - 0	573:$1.5900 955:$1.5900 1910:$1.5900 191:$1.6900 382:$1.6900
FDMS8050ET30 DISTI # FDMS8050ET30	ON Semiconductor	Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R (Alt: FDMS8050ET30) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€1.3900 18000:€1.4900 6000:€1.5900 12000:€1.5900 3000:€1.7900
FDMS8050ET30 DISTI # FDMS8050ET30	ON Semiconductor	Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS8050ET30) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	18000:$1.3900 30000:$1.3900 3000:$1.4900 6000:$1.4900 12000:$1.4900
FDMS8050ET30 DISTI # 49Y8339	ON Semiconductor	FET 30V 0.65 MOHM PQFN56 / REEL	0	30000:$1.4500 18000:$1.4800 12000:$1.5300 6000:$1.6500 3000:$1.7700 1:$1.8500
FDMS8050ET30 DISTI # 46AC0791	ON Semiconductor	MOSFET, N-CH, 30V, 423A, POWER 56-8,Transistor Polarity:N Channel,Continuous Drain Current Id:423A,Drain Source Voltage Vds:30V,On Resistance Rds(on):500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power RoHS Compliant: Yes	1744	1000:$1.6700 500:$1.8100 250:$1.9100 100:$1.9600 50:$2.0000 25:$2.0500 10:$2.0900 1:$2.1400
FDMS8050ET30 DISTI # 512-FDMS8050ET30	ON Semiconductor	MOSFET FET 30V 0.65 MOHM PQFN56 RoHS: Compliant	24542	1:$2.1200 250:$1.8900 500:$1.7900 1000:$1.6500 3000:$1.5700
FDMS8050ET30	Fairchild Semiconductor Corporation	Power Field-Effect Transistor RoHS: Compliant	29400	1000:$1.7200 500:$1.8100 100:$1.8900 25:$1.9700 1:$2.1200
FDMS8050ET30 DISTI # 2825172	ON Semiconductor	MOSFET, N-CH, 30V, 423A, POWER 56-8	1736	500:£1.3900 250:£1.4700 100:£1.5600 10:£1.6500 1:£1.8800
FDMS8050ET30 DISTI # 2825172	ON Semiconductor	MOSFET, N-CH, 30V, 423A, POWER 56-8 RoHS: Compliant	1744	1000:$2.7700 500:$3.0500 250:$3.4800 100:$3.8700 10:$4.4600 1:$5.1200

图片	型号	描述
	Mfr.#: FDMS8026S OMO.#: OMO-FDMS8026S	MOSFET 30V N-Channel PowerTrench SyncFET
	Mfr.#: FDMS8050 OMO.#: OMO-FDMS8050	MOSFET PT8 N 30/20 in Powerclip 56 Single
	Mfr.#: FDMS8023S OMO.#: OMO-FDMS8023S	MOSFET 30V N-Channel PowerTrench SyncFET
	Mfr.#: FDMS8095AC OMO.#: OMO-FDMS8095AC	MOSFET PT5 150V Dual N & P-Channel Power
	Mfr.#: FDMS8018 OMO.#: OMO-FDMS8018-ON-SEMICONDUCTOR	MOSFET N-CH 30V 30A 8PQFN
	Mfr.#: FDMS8020 OMO.#: OMO-FDMS8020-ON-SEMICONDUCTOR	MOSFET N-CH 30V 26A 8-PQFN
	Mfr.#: FDMS8025S OMO.#: OMO-FDMS8025S-ON-SEMICONDUCTOR	MOSFET N-CH 30V POWER56
	Mfr.#: FDMS8027S , 1N5239BTA OMO.#: OMO-FDMS8027S-1N5239BTA-1190	全新原装
	Mfr.#: FDMS8050ET30 OMO.#: OMO-FDMS8050ET30-ON-SEMICONDUCTOR	MOSFET N-CH 30V 55A 8-PQFN
	Mfr.#: FDMS8095AC OMO.#: OMO-FDMS8095AC-ON-SEMICONDUCTOR	MOSFET N/P-CH 150V 6.2A/1A PWR56

FDMS8050ET30

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes