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STF35N60DM2

STF35N60DM2
Mfr. #:
STF35N60DM2
制造商:
STMicroelectronics
描述:
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package
生命周期:
制造商新产品。
数据表:
STF35N60DM2 数据表
交货:
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ECAD Model:
更多信息:
STF35N60DM2 更多信息 STF35N60DM2 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220FP-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
28 A
Rds On - 漏源电阻：
110 mOhms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
25 V
Qg - 门电荷：
54 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
40 W
配置：
单身的
频道模式：
增强
商品名：
网状网
打包：
管子
系列：
STF35N60DM2
品牌：
意法半导体
秋季时间：
10.7 ns
产品类别：
MOSFET
上升时间：
17 ns
出厂包装数量：
1000
子类别：
MOSFET
典型关断延迟时间：
68 ns
典型的开启延迟时间：
21.2 ns
单位重量：
0.081130 oz
Tags
STF35N, STF35, STF3, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package
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N-Channel 600 V 110 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP
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Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 600V, 28A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
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N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP package
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Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-220FP Tube
***ment14 APAC
MOSFET, N-CH, 600V, 34A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Source Voltage Vds:600V; On Resistance
***nell
MOSFET, N-CH, 600V, 34A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
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VISHAY SIHP33N60EF-GE3 MOSFET, N CHANNEL, 600V, 33A, TO-220AB-3
***nell
MOSFET, N CH, 600V, 33A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 278W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -
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N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP package
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Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
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Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-220AB Tube
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Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-220 package
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Single N-Channel 600 V 125 mOhm 56 nC CoolMOS™ Power Mosfet - TO-220-3FP
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Transistor MOSFET N-Channel 600V 30A 3-Pin TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 30A, To-220Fp; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA60R125P6XKSA1
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Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
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Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
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VISHAY SIHA22N60E-E3 MOSFET, N CHANNEL, 600V, 21A, TO-220F
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E SERIES HIGH VOLTAGE THIN-LEAD TO-220 FULLPAK 9 POWER MOSFE
***id Electronics
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***ark
MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
型号 制造商 描述 库存 价格
STF35N60DM2
DISTI # V99:2348_17754058		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		158
  • 1000:$2.3270
  • 500:$2.8920
  • 250:$3.2190
  • 100:$3.3970
  • 10:$3.8720
  • 1:$5.0567
STF35N60DM2
DISTI # 497-16358-5-ND		STMicroelectronicsMOSFET N-CH 600V 28A
RoHS: Compliant
Min Qty: 1
Container: Tube		1160In Stock
  • 2500:$2.4439
  • 500:$3.0503
  • 100:$3.5831
  • 50:$4.1344
  • 10:$4.3730
  • 1:$4.8700
STF35N60DM2
DISTI # 25959734		STMicroelectronicsTrans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		158
  • 3:$5.0567
STF35N60DM2
DISTI # STF35N60DM2		STMicroelectronicsMOS Power Transistors HV (>= 200V) - Bulk (Alt: STF35N60DM2)
RoHS: Compliant
Min Qty: 1000
Container: Bulk		Americas - 0
  • 5000:$2.1900
  • 10000:$2.1900
  • 3000:$2.2900
  • 2000:$2.4900
  • 1000:$2.5900
STF35N60DM2
DISTI # STF35N60DM2		STMicroelectronicsMOS Power Transistors HV (>= 200V) (Alt: STF35N60DM2)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.9900
  • 100:€2.1900
  • 500:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.7900
STF35N60DM2
DISTI # 84Y8594		STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$2.1900
STF35N60DM2
DISTI # 511-STF35N60DM2		STMicroelectronicsMOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220FP package
RoHS: Compliant		591
  • 1:$4.6300
  • 10:$3.9300
  • 100:$3.4100
  • 250:$3.2300
  • 500:$2.9000
  • 1000:$2.4500
  • 2000:$2.3200
STF35N60DM2
DISTI # 1116464P		STMicroelectronicsMOSFET N-CH 600V 28A MDMESH DM2 TO-220FP, TU128
  • 1000:£1.7750
  • 500:£2.1050
  • 100:£2.4700
  • 10:£2.8500
STF35N60DM2
DISTI # STF35N60DM2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,17A,40W,TO220FP40
  • 50:$3.4700
  • 10:$3.8600
  • 3:$4.8000
  • 1:$5.5900
STF35N60DM2
DISTI # 2531107		STMicroelectronicsMOSFET, N-CH, 600V, 28A, TO-220FP
RoHS: Compliant		4
  • 500:£2.2100
  • 250:£2.4600
  • 100:£2.6000
  • 10:£3.0000
  • 1:£3.9400
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可用性
库存:
591
订购:
2574
输入数量:
STF35N60DM2的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$4.63
US$4.63
10
US$3.93
US$39.30
100
US$3.41
US$341.00
250
US$3.23
US$807.50
500
US$2.90
US$1 450.00
1000
US$2.45
US$2 450.00
2000
US$2.32
US$4 640.00
5000
US$2.24
US$11 200.00
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