SIE850DF-T1-E3

Mfr. #:: SIE850DF-T1-E3
制造商:: Vishay / Siliconix
描述:: RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
生命周期:: 制造商新产品。
数据表:: SIE850DF-T1-E3 数据表
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ECAD Model:
更多信息:: SIE850DF-T1-E3 更多信息

产品属性
属性值

制造商: 威世 / Siliconix

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

部分别名: SIE850DF-E3

安装方式: 贴片/贴片

包装盒: PolarPAK-10

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 5.2 W

最高工作温度: + 150 C

最低工作温度: - 50 C

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 35 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 2.5 mOhms

晶体管极性: N通道

通道模式: 增强

Tags: SIE85, SIE8, SIE

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE850DF-T1-E3 更多信息

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

型号	制造商	描述	库存	价格
SIE850DF-T1-E3 DISTI # 781-SIE850DF-E3	Vishay Intertechnologies	MOSFET 30V 164A 104W 2.5mohm @ 10V RoHS: Compliant	0	3000:$1.7500

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	Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3	MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-E3 OMO.#: OMO-SIE850DF-T1-E3	MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-E3 OMO.#: OMO-SIE850DF-T1-E3-317	RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V