SIE850DF-T1-GE3

SIE850DF-T1-GE3
Mfr. #:
SIE850DF-T1-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 30V 164A 104W 2.5mohm @ 10V
生命周期:
制造商新产品。
数据表:
SIE850DF-T1-GE3 数据表
交货:
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支付:
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ECAD Model:
更多信息:
SIE850DF-T1-GE3 更多信息
产品属性
属性值
制造商:
威世
产品分类:
MOSFET
RoHS:
E
技术:
安装方式:
贴片/贴片
包装/案例:
PolarPAK-10
商品名:
TrenchFET、PolarPAK
打包:
卷轴
高度:
0.8 mm
长度:
6.15 mm
系列:
SIE
宽度:
5.16 mm
品牌:
威世 / Siliconix
产品类别:
MOSFET
出厂包装数量:
3000
子类别:
MOSFET
第 # 部分别名:
SIE850DF-GE3
Tags
SIE85, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
型号 制造商 描述 库存 价格
SIE850DF-T1-GE3
DISTI # 781-SIE850DF-GE3
Vishay IntertechnologiesMOSFET 30V 164A 104W 2.5mohm @ 10V
RoHS: Compliant
0
  • 3000:$1.7500
图片 型号 描述
SIE850DF-T1-GE3

Mfr.#: SIE850DF-T1-GE3

OMO.#: OMO-SIE850DF-T1-GE3

MOSFET 30V 164A 104W 2.5mohm @ 10V
SIE850DF-T1-E3

Mfr.#: SIE850DF-T1-E3

OMO.#: OMO-SIE850DF-T1-E3

MOSFET 30V 164A 104W 2.5mohm @ 10V
SIE850DF-T1-E3

Mfr.#: SIE850DF-T1-E3

OMO.#: OMO-SIE850DF-T1-E3-317

RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
SIE850DF-T1-GE3

Mfr.#: SIE850DF-T1-GE3

OMO.#: OMO-SIE850DF-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
可用性
库存:
Available
订购:
3500
输入数量:
SIE850DF-T1-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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