STW18NM60ND

STW18NM60ND
Mfr. #:
STW18NM60ND
制造商:
STMicroelectronics
描述:
MOSFET N-CH 600V 13A TO-247
生命周期:
制造商新产品。
数据表:
STW18NM60ND 数据表
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STW18NM60ND 更多信息 STW18NM60ND Product Details
产品属性
属性值
制造商
英石
产品分类
FET - 单
系列
N 通道 MDmesh
打包
管子
单位重量
1.340411 oz
安装方式
通孔
包装盒
TO-247-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
130 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
18 ns
上升时间
15.5 ns
VGS-栅极-源极-电压
25 V
Id 连续漏极电流
13 A
Vds-漏-源-击穿电压
650 V
VGS-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
290 mOhms
晶体管极性
N通道
典型关断延迟时间
13 ns
典型开启延迟时间
55 ns
Qg-门电荷
34 nC
Tags
STW18NM6, STW18NM, STW18, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans MOSFET N-CH 600V 13A 3-Pin TO-247 Tube
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Power MOSFET Nchannel MDmesh II 600V 13A
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Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
***ark
MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
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Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
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Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
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Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
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IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC
***nell
MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V
型号 制造商 描述 库存 价格
STW18NM60ND
DISTI # 497-13887-5-ND
STMicroelectronicsMOSFET N-CH 600V 13A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
254In Stock
  • 120:$5.1345
  • 30:$5.5967
  • 1:$6.8700
STW18NM60NDSTMicroelectronicsN-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
RoHS: Compliant
300Tube
  • 600:$3.0000
STW18NM60ND
DISTI # 511-STW18NM60ND
STMicroelectronicsMOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
RoHS: Compliant
0
    STW18NM60NDSTMicroelectronicsAVAILABLE1899
      STW18NM60ND
      DISTI # XSFP00000145774
      STMicroelectronics 
      RoHS: Compliant
      202
      • 34:$6.0000
      • 202:$5.4500
      图片 型号 描述
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      全新原装
      STW18NM80,18NM80

      Mfr.#: STW18NM80,18NM80

      OMO.#: OMO-STW18NM80-18NM80-1190

      全新原装
      可用性
      库存:
      Available
      订购:
      4500
      输入数量:
      STW18NM60ND的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$4.50
      US$4.50
      10
      US$4.28
      US$42.75
      100
      US$4.05
      US$405.00
      500
      US$3.82
      US$1 912.50
      1000
      US$3.60
      US$3 600.00
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