SIHU3N50D-E3

Mfr. #:: SIHU3N50D-E3
制造商:: Vishay
描述:: IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS
生命周期:: 制造商新产品。
数据表:: SIHU3N50D-E3 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: SIHU3N50D-E3 更多信息

产品属性
属性值

制造商: 威世

产品分类: 晶体管 - FET、MOSFET - 单

系列: E

打包: 管子

部分别名: SIHU3N50D-GE3

单位重量: 0.011640 oz

安装方式: 通孔

包装盒: IPAK-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 104 W

VGS-栅极-源极-电压: 5 V

Id 连续漏极电流: 3 A

Vds-漏-源-击穿电压: 500 V

Rds-On-Drain-Source-Resistance: 3.2 Ohms

晶体管极性: N通道

Qg-门电荷: 6 nC

Tags: SIHU3N50D, SIHU3, SIHU, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHU3N50D-E3 更多信息

D-Series High Voltage Power MOSFETs: Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.

Market price

型号	制造商	描述	库存	价格
SIHU3N50D-E3 DISTI # SIHU3N50D-E3-ND	Vishay Siliconix	MOSFET N-CH 500V 3A TO251 IPAK RoHS: Compliant Min Qty: 3000 Container: Tube	Temporarily Out of Stock	3000:$0.3992
SIHU3N50D-E3 DISTI # SIHU3N50D-E3	Vishay Intertechnologies	Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU3N50D-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3769 6000:$0.3659 12000:$0.3509 18000:$0.3409 30000:$0.3319
SIHU3N50D-E3 DISTI # 78-SIHU3N50D-E3	Vishay Intertechnologies	MOSFET 500V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	2630	1:$0.9100 10:$0.7470 100:$0.5730 500:$0.4930 1000:$0.3890 2500:$0.3630 5000:$0.3450 10000:$0.3370
SIHU3N50D-GE3 DISTI # 78-SIHU3N50D-GE3	Vishay Intertechnologies	MOSFET 500V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	2999	1:$0.9300 10:$0.7410 100:$0.5620 500:$0.4640 1000:$0.3720 3000:$0.3370 6000:$0.3140 9000:$0.3020
SIHU3N50D-GE3	Vishay Intertechnologies	MOSFET 500V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant	Americas -

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图片	型号	描述
	Mfr.#: SIHU3N50DA-GE3 OMO.#: OMO-SIHU3N50DA-GE3	MOSFET 500V Vds 30V Vgs IPAK (TO-251)
	Mfr.#: SIHU3N50D-E3 OMO.#: OMO-SIHU3N50D-E3	MOSFET 500V Vds 30V Vgs IPAK (TO-251)
	Mfr.#: SIHU3N50D-E3 OMO.#: OMO-SIHU3N50D-E3-VISHAY	IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS
	Mfr.#: SIHU3N50D-GE3 OMO.#: OMO-SIHU3N50D-GE3-VISHAY	MOSFET N-CH 500V 3A TO251 IPAK
	Mfr.#: SIHU3N50GE3 OMO.#: OMO-SIHU3N50GE3-1190	全新原装
	Mfr.#: SIHU3N50DA-GE3 OMO.#: OMO-SIHU3N50DA-GE3-VISHAY	MOSFET N-CHANNEL 500V 3A IPAK