 |  |  | |
| PartNumber | SIHU2N80E-GE3 | SIHU3N50DA-GE3 | SIHU3N50D-E3 |
| Description | MOSFET 800V Vds 30V Vgs IPAK (TO-251) | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | MOSFET 500V Vds 30V Vgs IPAK (TO-251) |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 500 V | 500 V |
| Id Continuous Drain Current | 2.8 A | 3 A | 3 A |
| Rds On Drain Source Resistance | 2.38 Ohms | 2.6 Ohms | 3.2 Ohms |
| Vgs th Gate Source Threshold Voltage | 4 V | 3 V | 5 V |
| Vgs Gate Source Voltage | 10 V | 30 V | 30 V |
| Qg Gate Charge | 9.8 nC | 6 nC | 6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 62.5 W | 69 W | 69 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | E | D | D |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 27 ns | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7 ns | 9 ns | 9 ns |
| Factory Pack Quantity | 75 | 75 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 11 ns | 11 ns |
| Typical Turn On Delay Time | 11 ns | 12 ns | 12 ns |
| Unit Weight | 0.011993 oz | 0.011993 oz | 0.011640 oz |
| Forward Transconductance Min | - | 1 S | - |
| Part # Aliases | - | - | SIHU3N50D-GE3 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHU6N80E-GE3 | MOSFET 800V Vds 30V Vgs IPAK (TO-251) | |
| SIHU2N80E-GE3 | MOSFET 800V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU4N80E-GE3 | MOSFET 800V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU3N50DA-GE3 | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU6N62E-GE3 | MOSFET 620V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU3N50D-E3 | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU6N65E-GE3 | MOSFET 650V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU4N80AE-GE3 | MOSFET Nch 800V Vds 30V Vgs TO-251 | ||
| SIHU7N60E-GE3 | MOSFET 600V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU7N60E-E3 | MOSFET 600V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU5N50D-E3 | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | ||
| SIHU5N50D-GE3 | MOSFET 500V Vds 30V Vgs IPAK (TO-251) | ||
| SIHUB-8 | Motors & Drives Motor Drives CONTROLLER | ||
| SIHU2N80E | 全新原装 | ||
| SIHU3N50GE3 | 全新原装 | ||
| SIHU5N50D | 全新原装 | ||
| SIHU6N62E | 全新原装 | ||
| SIHU7N60E | 全新原装 | ||
Vishay |
SIHU3N50D-E3 | IGBT Transistors MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS | |
| SIHU7N60E-E3 | RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHU6N65E-GE3 | RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS | ||
| SIHU6N62E-GE3 | RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS | ||
| SIHU3N50D-GE3 | MOSFET N-CH 500V 3A TO251 IPAK | ||
| SIHU5N50D-E3 | MOSFET N-CH 500V 5.3A TO251 IPAK | ||
| SIHU7N60E-GE3 | MOSFET N-CH 600V 7A TO-251 | ||
| SIHU3N50DA-GE3 | MOSFET N-CHANNEL 500V 3A IPAK | ||
| SIHU2N80E-GE3 | MOSFET N-CH 800V 2.8A IPAK | ||
| SIHU4N80E-GE3 | MOSFET N-CHAN 800V TO-251 | ||
| SIHU5N50D-GE3 | MOSFET N-CH 500V 5.3A TO251 IPAK | ||
| SIHU6N80E-GE3 | MOSFET N-CHAN 800V TO-251 |