A1P35S12M3-F

A1P35S12M3-F
Mfr. #:
A1P35S12M3-F
制造商:
STMicroelectronics
描述:
IGBT TRENCH 1200V 35A ACEPACK1
生命周期:
制造商新产品。
数据表:
A1P35S12M3-F 数据表
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A1P35S12M3-F 更多信息 A1P35S12M3-F Product Details
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A1P
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
A1P35S12M3 Series 1200 V 35 A Trench Gate Field-Stop IGBT - ACEPACK™ 1
***ical
Trans IGBT Module N-CH 1200V 35A 250000mW 22-Pin ACEPACK-1 Frame
***ark
Acepack Power Modules Rohs Compliant: Yes
***i-Key
IGBT TRENCH 1200V 35A ACEPACK1
***ronik
SIXPACK 1200V 35A ACEPACK1
***et Europe
PTD HIGH VOLTAGE
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 35A; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:ACEPACK 1 M Series; SVHC:No SVHC (07-Jul-2017)
***nell
IGBT, MODULO, CA-N, 1.2KV, 35A; Polarità Transistor:Canale N; Corrente di Collettore CC:35A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:250W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ACEPACK 1 M Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
ACEPACK™ IGBT Modules
STMicroelectronics​ ACEPACK™ IGBT Modules are a family of new plastic power modules developed to address power management solutions and industrial applications. The ACEPACK™ 1 and ACEPACK™ 2 packages are introduced with both Converter Inverter Brake (CIB) and six-pack topologies that integrate the advanced trench-gate field-stop technologies. These ACEPACK IGBT-modules feature ACEPACK 1 or ACEPACK 2 power modules, integrated Negative Temperature Coefficient (NTC), and CIB or six-pack topology. These modules cover the appropriate use of the new IGBT-technology by representing the best compromise between conduction and switching-loss to maximize efficiency by 20kHz. These IGBT modules are ideal for application in industrial motor drives, solar panels, welding, and inverters.Learn More
型号 制造商 描述 库存 价格
A1P35S12M3-F
DISTI # V99:2348_19042714
STMicroelectronicsA1P35S12M3-F82
  • 250:$30.8600
  • 100:$31.9000
  • 25:$35.9200
  • 10:$37.4600
  • 5:$38.8700
  • 1:$40.1500
A1P35S12M3-F
DISTI # V36:1790_19103893
STMicroelectronicsA1P35S12M3-F0
  • 36000:$26.2100
  • 18000:$26.2200
  • 3600:$29.2200
  • 360:$36.8300
  • 36:$38.2500
A1P35S12M3-F
DISTI # 497-17741-ND
STMicroelectronicsIGBT TRENCH 1200V 35A ACEPACK1
RoHS: Not compliant
Min Qty: 1
Container: Tray
20In Stock
  • 108:$34.2563
  • 36:$37.8000
  • 10:$39.4540
  • 1:$42.2900
A1P35S12M3-F
DISTI # 30351569
STMicroelectronicsA1P35S12M3-F82
  • 1:$40.1500
A1P35S12M3-F
DISTI # A1P35S12M3-F
STMicroelectronicsPTD HIGH VOLTAGE (Alt: A1P35S12M3-F)
RoHS: Compliant
Min Qty: 1
Europe - 36
  • 1000:€27.2900
  • 500:€29.1900
  • 100:€30.2900
  • 50:€31.4900
  • 25:€32.7900
  • 10:€34.0900
  • 1:€37.1900
A1P35S12M3-F
DISTI # A1P35S12M3-F
STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: A1P35S12M3-F)
RoHS: Compliant
Min Qty: 18
Container: Tray
Americas - 22
  • 180:$27.6900
  • 90:$28.3900
  • 54:$29.1900
  • 36:$29.9900
  • 18:$30.7900
A1P35S12M3-F
DISTI # 47AC8729
STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 35A,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:250W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes12
  • 250:$31.8200
  • 100:$32.9500
  • 50:$34.6500
  • 25:$36.3600
  • 10:$37.9500
  • 5:$39.7600
  • 1:$40.6700
A1P35S12M3-F.
DISTI # 98AC0773
STMicroelectronicsACEPACK POWER MODULES ROHS COMPLIANT: YES22
  • 250:$31.8200
  • 100:$32.9500
  • 50:$34.6500
  • 25:$36.3600
  • 10:$37.9500
  • 5:$39.7600
  • 1:$40.6700
A1P35S12M3-F
DISTI # 511-A1P35S12M3-F
STMicroelectronicsIGBT Modules PTD HIGH VOLTAGE
RoHS: Compliant
43
  • 1:$40.2700
  • 5:$39.3700
  • 10:$37.5700
  • 25:$36.0000
  • 100:$32.6200
  • 250:$31.5000
A1P35S12M3-F
DISTI # 2832454
STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 35A12
  • 50:£25.4800
  • 10:£27.4700
  • 5:£30.0400
  • 1:£30.7300
A1P35S12M3-F
DISTI # 2832454
STMicroelectronicsIGBT, MODULE, N-CH, 1.2KV, 35A
RoHS: Compliant
12
  • 108:$52.2800
  • 36:$57.6900
  • 1:$64.5400
A1P35S12M3-F
DISTI # XSKDRABV0039477
STMicroelectronics 
RoHS: Compliant
36 in Stock0 on Order
  • 36:$42.9900
  • 22:$46.0600
图片 型号 描述
A1P35S12M3

Mfr.#: A1P35S12M3

OMO.#: OMO-A1P35S12M3

IGBT Modules PTD HIGH VOLTAGE
A1P35S12M3-F

Mfr.#: A1P35S12M3-F

OMO.#: OMO-A1P35S12M3-F

IGBT Modules PTD HIGH VOLTAGE
A1P35S12M3

Mfr.#: A1P35S12M3

OMO.#: OMO-A1P35S12M3-STMICROELECTRONICS

IGBT TRENCH 1200V 35A ACEPACK1
A1P35S12M3-F

Mfr.#: A1P35S12M3-F

OMO.#: OMO-A1P35S12M3-F-STMICROELECTRONICS

IGBT TRENCH 1200V 35A ACEPACK1
可用性
库存:
Available
订购:
2500
输入数量:
A1P35S12M3-F的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$44.01
US$44.01
10
US$41.81
US$418.12
100
US$39.61
US$3 961.14
500
US$37.41
US$18 705.40
1000
US$35.21
US$35 210.20
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