SIHB33N60EF-GE3

SIHB33N60EF-GE3
Mfr. #:
SIHB33N60EF-GE3
制造商:
Vishay
描述:
IGBT Transistors MOSFET N-Channel 600V
生命周期:
制造商新产品。
数据表:
SIHB33N60EF-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
SIHB33N60EF-GE3 更多信息
产品属性
属性值
制造商
威世 / 有机硅
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
单位重量
0.068654 oz
安装方式
贴片/贴片
商品名
EF系列
包装盒
TO-263-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
278 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
48 ns
上升时间
43 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
33 A
Vds-漏-源-击穿电压
600 V
VGS-th-Gate-Source-Threshold-Voltage
2 V
Rds-On-Drain-Source-Resistance
98 mOhms
晶体管极性
N通道
典型关断延迟时间
161 ns
典型开启延迟时间
28 ns
Qg-门电荷
155 nC
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***ure Electronics
600V, 33A, 98MOHM, D2PAK, EF SERIES
***i-Key
MOSFET N-CH 600V 33A TO-263
***ark
N-Channel 600V
***
N-CH 600V T0-263
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
型号 制造商 描述 库存 价格
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk
934In Stock
  • 1000:$3.8610
  • 500:$4.4330
  • 100:$5.2910
  • 10:$6.4350
  • 1:$7.1500
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.6900
  • 2000:$3.5900
  • 4000:$3.4900
  • 6000:$3.3900
  • 10000:$3.2900
SIHB33N60EF-GE3
DISTI # 78-SIHB33N60EF-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
640
  • 1:$6.5000
  • 10:$5.8600
  • 25:$5.3400
  • 100:$4.8200
  • 250:$4.4300
  • 500:$4.3500
SIHB33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
  • 3000:$3.3280
图片 型号 描述
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3

MOSFET N-Channel 600V
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

IGBT Transistors MOSFET N-Channel 600V
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

全新原装
SIHB33N60E

Mfr.#: SIHB33N60E

OMO.#: OMO-SIHB33N60E-1190

N-CH 600V 99mOhm 33A TO263
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

MOSFET N-CH 600V 33A TO263
可用性
库存:
Available
订购:
4500
输入数量:
SIHB33N60EF-GE3的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$4.41
US$4.41
10
US$4.19
US$41.94
100
US$3.97
US$397.33
500
US$3.75
US$1 876.30
1000
US$3.53
US$3 531.80
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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