IRF8513PBF

IRF8513PBF
Mfr. #:
IRF8513PBF
制造商:
Infineon / IR
描述:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
生命周期:
制造商新产品。
数据表:
IRF8513PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8513PBF DatasheetIRF8513PBF Datasheet (P4-P6)IRF8513PBF Datasheet (P7-P9)IRF8513PBF Datasheet (P10-P11)
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
SO-8
通道数:
2 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
8 A
Rds On - 漏源电阻:
22.2 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
5.7 nC
Pd - 功耗:
1.5 W
配置:
双重的
打包:
管子
高度:
1.75 mm
长度:
4.9 mm
晶体管类型:
2 N-Channel
宽度:
3.9 mm
品牌:
英飞凌/红外
产品类别:
MOSFET
出厂包装数量:
95
子类别:
MOSFET
第 # 部分别名:
SP001555762
单位重量:
0.019048 oz
Tags
IRF85, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
; Continuous Drain Current, Id:8A; On Resistance, Rds(on):15.5mohm; No. of Pins:8
***nell
DUAL N CH MOSFET, 30V, 8A, SOIC
***et
Trans MOSFET N-CH 30V 8A/11A 8-Pin SO
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
型号 制造商 描述 库存 价格
IRF8513PBF
DISTI # IRF8513PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 8A/11A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF8513PBF
    DISTI # 70018021
    Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,11A,SO-8
    RoHS: Compliant
    0
    • 3800:$1.0600
    • 7600:$1.0390
    • 19000:$1.0070
    • 38000:$0.9650
    • 95000:$0.9010
    IRF8513PBF
    DISTI # 942-IRF8513PBF
    Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
    RoHS: Compliant
    0
      IRF8513PBFInfineon Technologies AGDual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET Power Mosfet - SOIC-8
      RoHS: Compliant
      42Tube
      • 25:$0.4750
      • 300:$0.4150
      • 1250:$0.3600
      IRF8513PBFInternational Rectifier 
      RoHS: Compliant
      Europe - 455
        图片 型号 描述
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF

        MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8513TRPBF

        Mfr.#: IRF8513TRPBF

        OMO.#: OMO-IRF8513TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8520

        Mfr.#: IRF8520

        OMO.#: OMO-IRF8520-1190

        全新原装
        可用性
        库存:
        Available
        订购:
        2500
        输入数量:
        IRF8513PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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