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| PartNumber | IRF8513PBF | IRF8513TRPBF | IRF8520 |
| Description | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | MOSFET 2N-CH 30V 8A/11A 8-SOIC | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 22.2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 5.7 nC | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | Dual | - |
| Packaging | Tube | Digi-ReelR Alternate Packaging | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 95 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001555762 | - | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Series | - | HEXFETR | - |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-SO | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 1.5W, 2.4W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 766pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 8A, 11A | - |
| Rds On Max Id Vgs | - | 15.5 mOhm @ 8A, 10V | - |
| Vgs th Max Id | - | 2.35V @ 25μA | - |
| Gate Charge Qg Vgs | - | 8.6nC @ 4.5V | - |
| Pd Power Dissipation | - | 1.5 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 22.2 mOhms | - |
| Qg Gate Charge | - | 5.7 nC | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRF8513PBF | MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC | |
Infineon Technologies |
IRF8513PBF | MOSFET 2N-CH 30V 8A/11A 8-SOIC | |
| IRF8513TRPBF | MOSFET 2N-CH 30V 8A/11A 8-SOIC | ||
| IRF8520 | 全新原装 |