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IPD80R1K4P7ATMA1

IPD80R1K4P7ATMA1
Mfr. #:
IPD80R1K4P7ATMA1
制造商:
Infineon Technologies
描述:
MOSFET
生命周期:
制造商新产品。
数据表:
IPD80R1K4P7ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPD80R1K4P7ATMA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
TO-252-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
800 V
Id - 连续漏极电流：
4 A
Rds On - 漏源电阻：
1.4 Ohms
Vgs th - 栅源阈值电压：
3 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
10 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
32 W
配置：
单身的
频道模式：
增强
商品名：
酷摩
打包：
卷轴
高度：
2.3 mm
长度：
6.5 mm
系列：
CoolMOS P7
宽度：
6.22 mm
品牌：
英飞凌科技
秋季时间：
20 ns
产品类别：
MOSFET
上升时间：
8 ns
出厂包装数量：
2500
子类别：
MOSFET
典型关断延迟时间：
40 ns
典型的开启延迟时间：
10 ns
第 # 部分别名：
IPD80R1K4P7 SP001422564
单位重量：
0.011993 oz
Tags
IPD80R1K4P, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 800V, 4A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
型号 制造商 描述 库存 价格
IPD80R1K4P7ATMA1
DISTI # V72:2272_16563308		Infineon Technologies AGTrans MOSFET N-CH 800V 4A T/R2225
  • 1000:$0.4007
  • 500:$0.5249
  • 250:$0.6087
  • 100:$0.6089
  • 25:$0.7106
  • 10:$0.8684
  • 1:$1.0124
IPD80R1K4P7ATMA1
DISTI # V36:1790_16563308		Infineon Technologies AGTrans MOSFET N-CH 800V 4A T/R0
  • 2500000:$0.3311
  • 1250000:$0.3314
  • 250000:$0.3592
  • 25000:$0.4093
  • 2500:$0.4178
IPD80R1K4P7ATMA1
DISTI # IPD80R1K4P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 800V 4A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2878In Stock
  • 1000:$0.4611
  • 500:$0.5840
  • 100:$0.7069
  • 10:$0.9070
  • 1:$1.0100
IPD80R1K4P7ATMA1
DISTI # IPD80R1K4P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 800V 4A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2878In Stock
  • 1000:$0.4611
  • 500:$0.5840
  • 100:$0.7069
  • 10:$0.9070
  • 1:$1.0100
IPD80R1K4P7ATMA1
DISTI # IPD80R1K4P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.3780
  • 12500:$0.3820
  • 5000:$0.3969
  • 2500:$0.4178
IPD80R1K4P7ATMA1
DISTI # 31994755		Infineon Technologies AGTrans MOSFET N-CH 800V 4A T/R10000
  • 2500:$0.3559
IPD80R1K4P7ATMA1
DISTI # 29444067		Infineon Technologies AGTrans MOSFET N-CH 800V 4A T/R2225
  • 18:$1.0124
IPD80R1K4P7ATMA1
DISTI # IPD80R1K4P7ATMA1		Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-252 T/R - Bulk (Alt: IPD80R1K4P7ATMA1)
Min Qty: 962
Container: Bulk		Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
IPD80R1K4P7ATMA1
DISTI # IPD80R1K4P7ATMA1		Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4P7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3609
  • 15000:$0.3669
  • 10000:$0.3799
  • 5000:$0.3939
  • 2500:$0.4089
IPD80R1K4P7ATMA1
DISTI # IPD80R1K4P7		Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-252 T/R (Alt: IPD80R1K4P7)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.3598
  • 62500:$0.3644
  • 25000:$0.3691
  • 12500:$0.3740
  • 7500:$0.3841
  • 5000:$0.3947
  • 2500:$0.4060
IPD80R1K4P7ATMA1
DISTI # SP001422564		Infineon Technologies AGTrans MOSFET N 800V 4A 3-Pin TO-252 T/R (Alt: SP001422564)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3379
  • 15000:€0.3639
  • 10000:€0.3939
  • 5000:€0.4299
  • 2500:€0.5249
IPD80R1K4P7ATMA1
DISTI # 16AC3360		Infineon Technologies AGMOSFET, N-CH, 800V, 4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes1519
  • 1000:$0.4310
  • 500:$0.5450
  • 250:$0.5820
  • 100:$0.6180
  • 50:$0.6800
  • 25:$0.7420
  • 10:$0.8040
  • 1:$0.9390
IPD80R1K4P7ATMA1Infineon Technologies AGSingle N-Channel 800 V 1.4 Ohm 10 nC CoolMOS Power Mosfet - DPAK
RoHS: Compliant		20Cut Tape/Mini-Reel
  • 1:$0.5950
  • 50:$0.4800
  • 100:$0.4600
  • 250:$0.4400
  • 500:$0.4200
IPD80R1K4P7ATMA1
DISTI # 726-IPD80R1K4P7ATMA1		Infineon Technologies AGMOSFET
RoHS: Compliant		5033
  • 1:$0.9300
  • 10:$0.7960
  • 100:$0.6120
  • 500:$0.5400
  • 1000:$0.4270
IPD80R1K4P7ATMA1Infineon Technologies AGInfineon CoolMOS™ N-Channel Power MOSFETIPD80R1K4P7 - TO252
RoHS: Compliant		2500
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
IPD80R1K4P7ATMA1
DISTI # 1300906P		Infineon Technologies AGMOSFET N-CH 800V 4A COOLMOS P7 TO-252, RL9679
  • 25:£0.3000
IPD80R1K4P7ATMA1
DISTI # 2750414		Infineon Technologies AGMOSFET, N-CH, 800V, 4A, TO-2522483
  • 500:£0.3950
  • 250:£0.4220
  • 100:£0.4480
  • 25:£0.5820
  • 5:£0.6870
IPD80R1K4P7ATMA1
DISTI # 2750414		Infineon Technologies AGMOSFET, N-CH, 800V, 4A, TO-252
RoHS: Compliant		1384
  • 500:$0.8810
  • 100:$1.0700
  • 10:$1.3700
  • 1:$1.5200
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可用性
库存:
Available
订购:
1988
输入数量:
IPD80R1K4P7ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.93
US$0.93
10
US$0.80
US$7.96
100
US$0.61
US$61.20
500
US$0.54
US$270.00
1000
US$0.43
US$427.00
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